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Transistoren (1315)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | APT40SM120J | - - - |  | 1130 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | MOSFET (Metalloxid) | SOT-227 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 1200 V | 32a (TC) | 20V | 100mohm @ 20a, 20V | 3V @ 1ma (Typ) | 130 NC @ 20 V | +25 V, -10 V | 2560 PF @ 1000 V | - - - | 165W (TC) | ||||||||||||||||||
 | APTM120VDA57T3G | - - - | | 6146 | 0.00000000 | Microsemi Corporation | Power MOS 7® | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | SP3 | APTM120 | MOSFET (Metalloxid) | 390W | SP3 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | 2 n-kanal (dual) | 1200 V (1,2 kV) | 17a | 684mohm @ 8.5a, 10V | 5 V @ 2,5 mA | 187nc @ 10v | 5155PF @ 25V | - - - | ||||||||||||||||||||
 | APT20M38BVFRG | - - - | | 2174 | 0.00000000 | Microsemi Corporation | Power Mos V® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 [b] | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 67a (TC) | 10V | 38mohm @ 500 mA, 10V | 4v @ 1ma | 225 NC @ 10 V | ± 30 v | 6120 PF @ 25 V. | - - - | 370W (TC) | |||||||||||||||||||
 | APTGF100A1202G | - - - | | 9828 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp2 | 568 w | Standard | Sp2 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | 1200 V | 135 a | 3,7 V @ 15V, 100a | 250 µA | NEIN | 6,5 NF @ 25 V. | |||||||||||||||||||||
| JantX2N7225 | - - - | | 8960 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/592 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-254-3, to-254aa (Gerade Leads) | MOSFET (Metalloxid) | To-254aa | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 27,4a (TC) | 10V | 105mohm @ 27.4a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | - - - | 4W (TA), 150W (TC) | ||||||||||||||||||
 | JantX2N2857 | - - - | | 6264 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/343 | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | TO-72-3 Metalldose | 200 MW | To-72 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 12,5 dB ~ 21 dB @ 450 MHz | 15 v | 40 ma | Npn | 30 @ 3ma, 1v | 500 MHz | 4,5 dB @ 450 MHz | |||||||||||||||||||||
| APTSM120AM08CT6AG | - - - | | 6482 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp6 | APTSM120 | Silziumkarbid (sic) | 2300W | Sp6 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 2 N-Kanal (Dual), Schottky | 1200 V (1,2 kV) | 370a (TC) | 10mohm @ 200a, 20V | 3v @ 10 mA | 1360nc @ 20V | - - - | |||||||||||||||||||
 | APTGT200A602G | - - - | | 6292 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp2 | AptGT200 | 625 w | Standard | Sp2 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Halbbrücke | TRABENFELD STOPP | 600 V | 290 a | 1,9 V @ 15V, 200a | 50 µA | NEIN | 12.3 NF @ 25 V. | ||||||||||||||||||
 | APT12F60K | - - - | | 8948 | 0.00000000 | Microsemi Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | APT12F60 | MOSFET (Metalloxid) | To-220 [k] | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 12a (TC) | 10V | 620mohm @ 6a, 10V | 5 V @ 500 ähm | 55 NC @ 10 V | ± 30 v | 2200 PF @ 25 V. | - - - | 225W (TC) | ||||||||||||||||
| Jantxv2N6796 | - - - | | 4329 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/557 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-205AF Metalldose | MOSFET (Metalloxid) | To-205AF (bis 39) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 8a (TC) | 10V | 195mohm @ 8a, 10V | 4v @ 250 ähm | 28.51 NC @ 10 V | ± 20 V | - - - | 800 MW (TA), 25W (TC) | ||||||||||||||||||
 | APTGF300DA120G | - - - | | 4683 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 1780 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 1200 V | 400 a | 3,9 V @ 15V, 300A | 500 µA | NEIN | 21 NF @ 25 V | |||||||||||||||||||||
| APTGF100DU120TG | - - - | | 5907 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 568 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Dual Gemeinsame Quelle | Npt | 1200 V | 135 a | 3,7 V @ 15V, 100a | 350 µA | Ja | 6.9 NF @ 25 V. | |||||||||||||||||||||
| APTGT100TA60PG | - - - | | 3060 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp6 | 340 w | Standard | SP6-P | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | DRIPHASE | TRABENFELD STOPP | 600 V | 150 a | 1,9 V @ 15V, 100a | 250 µA | NEIN | 6.1 NF @ 25 V | ||||||||||||||||||||
| APTM20SKM10TG | - - - | | 8888 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | MOSFET (Metalloxid) | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 175a (TC) | 10V | 12mohm @ 87,5a, 10V | 5v @ 5ma | 224 NC @ 10 V | ± 30 v | 13700 PF @ 25 V. | - - - | 694W (TC) | ||||||||||||||||||
| Jan2n6788 | - - - | | 7677 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/555 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-205AF Metalldose | MOSFET (Metalloxid) | To-39 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 100 v | 6a (TC) | 10V | 350Mohm @ 6a, 10V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | - - - | 800 MW (TC) | ||||||||||||||||||
| APTGT75DH60TG | - - - | | 6433 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp4 | 250 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Asymmetrische Brücke | TRABENFELD STOPP | 600 V | 100 a | 1,9 V @ 15V, 75A | 250 µA | Ja | 4.62 NF @ 25 V. | ||||||||||||||||||||
| APT47N65BC3G | - - - | | 5767 | 0.00000000 | Microsemi Corporation | Coolmos ™ | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | APT47N65 | MOSFET (Metalloxid) | To-247 [b] | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 650 V | 47a (TC) | 10V | 70 MOHM @ 30a, 10V | 3,9 V @ 2,7 mA | 260 NC @ 10 V | ± 20 V | 7015 PF @ 25 V. | - - - | 417W (TC) | ||||||||||||||||
| 2n5031 | - - - | | 4591 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | K. Loch | To-206af, bis 72-4 Metall Kann | 200 MW | To-72 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 12 dB @ 400MHz | 10V | 20 ma | Npn | 25 @ 1ma, 6v | 400 MHz | - - - | ||||||||||||||||||||||
| Jan2n6800 | - - - | | 6769 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/557 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-205AF Metalldose | MOSFET (Metalloxid) | To-39 | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 3a (TC) | 10V | 1,1OHM @ 3a, 10V | 4v @ 250 ähm | 34,75 NC @ 10 V. | ± 20 V | - - - | 800 MW (TA), 25W (TC) | ||||||||||||||||||
| APTSM120AM14CD3AG | - - - | | 5294 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Modul | APTSM120 | Silziumkarbid (sic) | 2140W | Modul | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 2 N-Kanal (Dual), Schottky | 1200 V (1,2 kV) | 337a (TC) | 11Mohm @ 180a, 20V | 3v @ 9ma | 1224nc @ 20V | 23000PF @ 1000V | - - - | ||||||||||||||||||
| APTGT150DA170D1G | - - - | | 9497 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | D1 | 780 w | Standard | D1 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1700 v | 280 a | 2,4 V @ 15V, 150a | 4 ma | NEIN | 13 NF @ 25 V | ||||||||||||||||||||
| MS2267 | - - - | | 1083 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 250 ° C (TJ) | Chassis -berg | M214 | 575W | M214 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 8db ~ 8.7db | 60 v | 20a | Npn | 10 @ 1a, 5V | 960 MHz ~ 1,215 GHz | - - - | ||||||||||||||||||||||
| APT4065Bng | - - - | | 2012 | 0.00000000 | Microsemi Corporation | Power Mos IV® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 30 | N-Kanal | 400 V | 11a (TC) | 10V | 650MOHM @ 5.5A, 10V | 4v @ 1ma | 55 NC @ 10 V | ± 30 v | 950 PF @ 25 V. | - - - | 180W (TC) | |||||||||||||||||||
| Jantxv2N6798U | - - - | | 5388 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/557 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5.5a (TC) | 10V | 420mohm @ 5,5a, 10V | 4v @ 250 ähm | 42.07 NC @ 10 V | ± 20 V | - - - | 800 MW (TA), 25W (TC) | ||||||||||||||||||
| MRFC545 | - - - | | 5051 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||
| APTGT75SK120D1G | - - - | | 8281 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | D1 | 357 w | Standard | D1 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 110 a | 2,1 V @ 15V, 75a | 4 ma | NEIN | 5.345 NF @ 25 V | ||||||||||||||||||||
 | Jan2n5013 | - - - | | 4239 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/727 | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205aa, bis 5-3 Metalldose | 1 w | To-5 | - - - | Rohs Nick Konform | Nicht Anwendbar | Ear99 | 8541.29.0095 | 1 | 800 V | 200 ma | 10NA (ICBO) | Npn | 30 @ 20 Ma, 10V | - - - | |||||||||||||||||||||||
| SD1057-01H | - - - | | 7524 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||
| APTM50DAM35TG | - - - | | 9601 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | MOSFET (Metalloxid) | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 99a (TC) | 10V | 39mohm @ 49.5a, 10V | 5v @ 5ma | 280 nc @ 10 v | ± 30 v | 14000 PF @ 25 V. | - - - | 781W (TC) | ||||||||||||||||||
 | Jan2N4957 | - - - | | 2808 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -65 ° C ~ 200 ° C (TJ) | K. Loch | TO-72-3 Metalldose | 200 MW | To-72 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 25 dB | 30V | 30 ma | PNP | 30 @ 5ma, 10V | - - - | 3,5 dB bei 450 MHz |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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