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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max)
UPA2371T1P-E1-A Renesas UPA2371T1P-E1-A 0,5800
RFQ
 ECAD 5 0.00000000 Renesas - - - Schüttgut Veraltet - - - Oberflächenhalterung 4-uflga UPA2371 MOSFET (Metalloxid) - - - 4-eflip (1,62x1.62) - - - Rohs Nick Konform Verkäfer undefiniert 2156-upa2371t1p-e1-a Ear99 8541.29.0095 1 2 n-kanal (dual) 24 v 6a - - - - - - - - - - - - - - -
2SK3377-Z-AZ Renesas 2SK3377-Z-Az 0,8300
RFQ
 ECAD 771 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252 (MP-3Z) - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-2SK3377-Z-Az Ear99 8541.29.0075 1 N-Kanal 60 v 20a (ta) 4 V, 10V 44mohm @ 10a, 10V 2,5 V @ 1ma 17 NC @ 10 V ± 20 V 760 PF @ 10 V - - - 1W (TA), 30W (TC)
2SK4150TZ-E Renesas 2SK4150TZ-E 0,6300
RFQ
 ECAD 19 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch To-226-3, bis 92-3 (to-226aa) MOSFET (Metalloxid) To-92 - - - Rohs Nick Konform Verkäfer undefiniert 2156-2SK4150TZ-E Ear99 8541.29.0095 1 N-Kanal 250 V 400 mA (TA) 2,5 V, 4 V. 5.7OHM @ 200 Ma, 4V 1,5 V @ 1ma 3,7 NC @ 4 V. ± 10 V 80 PF @ 25 V. - - - 750 MW (TA)
2SK1958-T1-A Renesas 2SK1958-T1-A 0,0700
RFQ
 ECAD 69 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 8-TSSOP, 8-MSOP (0,110 ", 2.80 mm Breit) MOSFET (Metalloxid) 8-mmpak - - - Rohs Nick Konform Verkäfer undefiniert 2156-2SK1958-T1-A Ear99 8541.21.0095 1 N-Kanal 16 v 100 mA (ta) 1,5 V, 4V 12ohm @ 10 ma, 4V 1,1 V @ 10 µA ± 7 V 10 PF @ 3 V - - - 150 MW (TA)
2SK3902-ZK-E1-AY Renesas 2SK3902-ZK-E1-ay 1.2100
RFQ
 ECAD 2 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) To-263-3 - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-2SK3902-ZK-E1-ay Ear99 8541.29.0075 1 N-Kanal 60 v 30a (TC) 4,5 V, 10 V. 21mohm @ 15a, 10V 2,5 V @ 1ma 25 NC @ 10 V ± 20 V 1200 PF @ 10 V - - - 1,5W (TA), 45W (TC)
2SJ358-T1-AZ Renesas 2SJ358-T1-Az 0,8400
RFQ
 ECAD 5 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-243aa MOSFET (Metalloxid) MP-2 - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-2SJ358-T1-Az Ear99 8541.29.0095 1 P-Kanal 60 v 3a (ta) 4 V, 10V 300 MOHM @ 1,5A, 10V 2V @ 1ma 23.9 NC @ 10 V. +10 V, -20 V 600 PF @ 10 V. - - - 2W (TA)
RJL5014DPP-E0#T2 Renesas RJL5014DPP-E0#T2 5.7400
RFQ
 ECAD 2 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220fp - - - Rohs Nick Konform Verkäfer undefiniert 2156-RJL5014DPP-E0#T2 Ear99 8541.29.0095 1 N-Kanal 500 V 19a (ta) 10V 400mohm @ 9.5a, 10V 4v @ 1ma 43 NC @ 10 V ± 30 v 1700 PF @ 25 V. - - - 35W (TC)
HAT1093C-EL-E Renesas HAT1093C-el-e 0,2500
RFQ
 ECAD 30 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 6-smd, Flache Leitungen MOSFET (Metalloxid) 6-cmfpak Herunterladen Rohs Nick Konform Verkäfer undefiniert 2156-Hat1093c-el-e Ear99 8541.29.0095 1 P-Kanal 12 v 3a (ta) 1,8 V, 4,5 V. 54mohm @ 1,5a, 4,5 V. 1,2 V @ 1ma 11 NC @ 4,5 V. ± 8 v 940 PF @ 10 V. - - - 900 MW (TA)
HAT1089C-EL-E Renesas HAT1089C-el-e - - -
RFQ
 ECAD 9103 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 6-smd, Flache Leitungen MOSFET (Metalloxid) 6-cmfpak - - - 2156-Hat1089c-el-e 1 P-Kanal 20 v 2a (ta) 2,5 V, 4,5 V. 103mohm @ 1a, 4,5 V. 1,4 V @ 1ma 4,5 NC @ 4,5 V. ± 12 V 365 PF @ 10 V - - - 850 MW (TA)
2SJ529L06-E Renesas 2SJ529L06-E 0,9400
RFQ
 ECAD 60 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch TO-251-3 Lange Leads, ipak, to-251ab MOSFET (Metalloxid) Dpak (l)-(2) - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-2SJ529L06-E Ear99 8541.29.0095 1 P-Kanal 60 v 10a (ta) 4 V, 10V 160Mohm @ 5a, 10V 2V @ 1ma ± 20 V 580 PF @ 10 V - - - 20W (TC)
UPA1770G-E1-A Renesas UPA1770G-E1-A 1.6800
RFQ
 ECAD 2 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 8-Soic (0,173 ", 4,40 mm Breit) UPA1770 MOSFET (Metalloxid) 750 MW (TA) 8-Sop - - - Rohs Nick Konform Verkäfer undefiniert 2156-upa1770g-e1-a Ear99 8541.29.0095 1 2 n-kanal (dual) 20V 6a (ta) 37mohm @ 3a, 4,5 V. 1,5 V @ 1ma 11nc @ 4,5V 1300PF @ 10V - - -
2SK1954-Z-E1-AZ Renesas 2SK1954-Z-E1-Az - - -
RFQ
 ECAD 3177 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) MP-3Z - - - 2156-2SK1954-Z-E1-Az 1 N-Kanal 180 v 4a (ta) 10V 650Mohm @ 2a, 10V 4v @ 1ma 10 nc @ 10 v ± 20 V 300 PF @ 10 V. - - - 1W (TA), 20W (TC)
NP69N03ZHGW-U Renesas NP69N03ZHGW-U - - -
RFQ
 ECAD 7422 0.00000000 Renesas - - - Schüttgut Aktiv - - - 2156-NP69N03ZHGW-U 1
RJK5026DPP-E0#T2 Renesas RJK5026DPP-E0#T2 2.9500
RFQ
 ECAD 4 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220fp - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-RJK5026DPP-E0#T2 Ear99 8541.29.0095 1 N-Kanal 500 V 6a (ta) 10V 1,7ohm @ 3a, 10V 4,5 V @ 1ma 14 NC @ 10 V ± 30 v 440 PF @ 25 V. - - - 28,5 W (TC)
RJP4301APP-00#T2 Renesas RJP4301App-00#T2 - - -
RFQ
 ECAD 4204 0.00000000 Renesas - - - Schüttgut Veraltet - - - 2156-RJP4301App-00#T2 1
NP90N04VUG-E1-AY Renesas NP90N04vug-e1-ay - - -
RFQ
 ECAD 8968 0.00000000 Renesas Automobil, AEC-Q101 Schüttgut Aktiv 175 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) TO-252 (MP-3ZP) - - - 2156-NP90N04vug-e1-ay 1 N-Kanal 40 v 90a (TC) 10V 4mohm @ 45a, 10V 4v @ 250 ähm 135 NC @ 10 V ± 20 V 7500 PF @ 25 V. - - - 1,2W (TA), 105W (TC)
2SK3482-Z-E2-AZ Renesas 2SK3482-Z-E2-Az - - -
RFQ
 ECAD 7930 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252 (MP-3Z) - - - 2156-2SK3482-Z-E2-Az 1 N-Kanal 100 v 36a 4,5 V, 10 V. 33mohm @ 18a, 10V 2,5 V @ 1ma 72 NC @ 10 V ± 20 V 3600 PF @ 10 V - - - 1W
2SK3402-AZ Renesas 2SK3402-Az 1.3800
RFQ
 ECAD 2 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252 (MP-3Z) Herunterladen Rohs Nick Konform UnberÜHrt Ereichen 2156-2SK3402-Az Ear99 8541.29.0075 1 N-Kanal 60 v 36a (TC) 4 V, 10V 15mohm @ 18a, 10V 2,5 V @ 1ma 61 NC @ 10 V ± 20 V 3200 PF @ 10 V. - - - 1W (TA), 40W (TC)
UPA1601GS-E1-A Renesas UPA1601GS-E1-A 1.8400
RFQ
 ECAD 40 0.00000000 Renesas - - - Schüttgut Veraltet -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,220 ", 5,59 mm BreiTe) UPA1601 MOSFET (Metalloxid) 1W (TA) 16-so-sop - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-upa1601gs-e1-a Ear99 8542.39.0001 163 7 N-Kanal 30V 270 Ma (TA) 5.3OHM @ 150 mA, 4V 800mv @ 150 mA - - - 15pf @ 10v - - -
HS54095TZ-E Renesas HS54095TZ-E 0,7900
RFQ
 ECAD 7 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch To-226-3, bis 92-3 (to-226aa) MOSFET (Metalloxid) To-92 - - - Rohs Nick Konform Verkäfer undefiniert 2156-HS54095TZ-E Ear99 8541.29.0095 1 N-Kanal 600 V 200 Ma (TA) 10V 16,5 Ohm @ 100 Ma, 10 V 5v @ 1ma 4,8 nc @ 10 v ± 30 v 66 PF @ 25 V. - - - 750 MW (TA)
2SK4092-S35-A Renesas 2SK4092-S35-A 2.8400
RFQ
 ECAD 5 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch TO-3P-3, SC-65-3 MOSFET (Metalloxid) To-3p (MP-88) Herunterladen Rohs Nick Konform UnberÜHrt Ereichen 2156-2SK4092-S35-A Ear99 8541.29.0075 1 N-Kanal 600 V 21a (TC) 10V 400mohm @ 10a, 10V 3,5 V @ 1ma 50 nc @ 10 v ± 30 v 3240 PF @ 10 V - - - 3W (TA), 200W (TC)
2SK3366-AZ Renesas 2SK3366-Az - - -
RFQ
 ECAD 5372 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) MP-3 - - - 2156-2SK3366-Az 1 N-Kanal 30 v 20a (ta) 10V 21mohm @ 10a, 10V 2,5 V @ 1ma 15 NC @ 10 V ± 20 V 730 PF @ 10 V. - - - 1W (TA), 30W (TC)
RJK5030DPD-03#J2 Renesas RJK5030DPD-03#J2 0,9900
RFQ
 ECAD 6 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) MP-3A - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-RJK5030DPD-03#J2 Ear99 8541.29.0095 1 N-Kanal 500 V 5a (ta) 10V 1,6OHM @ 2a, 10V 4,5 V @ 1ma ± 30 v 550 PF @ 25 V. - - - 41,7W (TC)
RJK1003DPP-E0#T2 Renesas RJK1003DPP-E0#T2 2.4000
RFQ
 ECAD 3 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220fp Herunterladen Rohs Nick Konform UnberÜHrt Ereichen 2156-RJK1003DPP-E0#T2 Ear99 8541.29.0095 1 N-Kanal 100 v 50a (ta) 10V 11mohm @ 25a, 10V 4v @ 1ma 59 NC @ 10 V ± 20 V 4150 PF @ 10 V. - - - 25W (TC)
RQM2201DNS#P0 Renesas RQM2201DNS#P0 1.1800
RFQ
 ECAD 32 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 6-WDFN Exponierte Pad RQM2201 MOSFET (Metalloxid) 1,5 W (TA) 6-Hwson (3x3) - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-RQM2201DNS#P0 Ear99 8541.29.0095 1 2 n-kanal (dual) 60 v 2a (ta) 225mohm @ 1a, 4,5 V. 1,4 V @ 1ma 2.4nc @ 4.5V 200pf @ 10v - - -
2SK3813-AZ Renesas 2SK3813-Az - - -
RFQ
 ECAD 4491 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) MP-3 - - - 2156-2SK3813-Az 1 N-Kanal 40 v 60a (TC) 4,5 V, 10 V. 5.3mohm @ 30a, 10V 2,5 V @ 1ma 96 NC @ 10 V ± 20 V 5500 PF @ 10 V. - - - 1W (TA), 84W (TC)
2SJ461-T1B-A Renesas 2SJ461-T1B-A - - -
RFQ
 ECAD 9937 0.00000000 Renesas - - - Schüttgut Veraltet - - - 2156-2SJ461-T1B-A 1
HAT1108C-EL-E Renesas HAT1108C-el-e - - -
RFQ
 ECAD 8371 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 6-smd, Flache Leitungen MOSFET (Metalloxid) 6-cmfpak - - - 2156-Hat1108c-el-e 1 P-Kanal 30 v 1,5a (ta) 4,5 v 194mohm @ 750 Ma, 10V 2V @ 1ma 3 NC @ 10 V ± 20 V 160 PF @ 10 V. - - - 830 MW (TA)
2SJ604-ZJ-E1-AZ Renesas 2SJ604-Zj-e1-Az 2.1600
RFQ
 ECAD 662 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) To-263 - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-2SJ604-Zj-e1-Az Ear99 8541.29.0095 1 P-Kanal 60 v 45a (TC) 4 V, 10V 30mohm @ 23a, 10V 2,5 V @ 1ma 63 NC @ 10 V ± 20 V 3300 PF @ 10 V. - - - 1,5 W (TA), 70 W (TC)
UPA1759G-E1-A Renesas UPA1759G-E1-A 0,5300
RFQ
 ECAD 5 0.00000000 Renesas - - - Schüttgut Veraltet 150 ° C. Oberflächenhalterung 8-Powersoic (0,173 ", 4,40 mm Breit) MOSFET (Metalloxid) 8-Powersop - - - Rohs Nick Konform UnberÜHrt Ereichen 2156-upa1759g-e1-a Ear99 8541.29.0095 1 N-Kanal 60 v 5a (TC) 4 V, 10V 150 MOHM @ 2,5A, 10V 2,5 V @ 1ma 8 NC @ 10 V ± 20 V 190 PF @ 10 V. - - - 2W (TA)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

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