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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | R6511Knd3tl1 | 2.2900 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | R6511 | MOSFET (Metalloxid) | To-252 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 650 V | 11a (TC) | 10V | 400 MOHM @ 3,8a, 10V | 5 V @ 320 µA | 22 NC @ 10 V. | ± 20 V | 760 PF @ 25 V. | - - - | 124W (TC) | ||||||||||||||||||||||
![]() | RX3L18BBGC16 | 7.6800 | ![]() | 7327 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | Rx3l18 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RX3L18BBGC16 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 240a (TA), 180a (TC) | 4,5 V, 10 V. | 1,84 MOHM @ 90A, 10V | 2,5 V @ 1ma | 160 nc @ 10 v | ± 20 V | 11000 PF @ 30 V | - - - | 192W (TC) | ||||||||||||||||||||||
Sh8m24gzetb | 1.3200 | ![]() | 9 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SH8M24 | MOSFET (Metalloxid) | 1.4W (TA) | 8-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N und p-kanal | 45 V | 6a (ta) | 46mohm @ 4,5a, 10 V, 63MOHM @ 3,5a, 10 V. | 2,5 V @ 1ma | 9,6nc @ 5v, 18,2nc @ 5v | 550pf @ 10v, 1700pf @ 10v | - - - | |||||||||||||||||||||||||
![]() | RGW60TS65HRC11 | 6.3700 | ![]() | 4916 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGW60 | Standard | 178 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RGW60TS65HRC11 | Ear99 | 8541.29.0095 | 450 | 400 V, 15a, 10ohm, 15 V. | TRABENFELD STOPP | 650 V | 64 a | 120 a | 1,9 V @ 15V, 30a | 84 NC | 36ns/107ns | |||||||||||||||||||||||
R6020ANZFL1C8 | - - - | ![]() | 4337 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Veraltet | 150 ° C. | K. Loch | TO-3P-3 Full Pack | R6020 | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 846-R6020ANZFL1C8 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 20a (ta) | 10V | 220mohm @ 10a, 10V | 4.15 V @ 1ma | 65 NC @ 10 V | ± 30 v | 2040 PF @ 25 V. | - - - | 120W (TC) | ||||||||||||||||||||||
![]() | RGWX5TS65EHRC11 | 11.4700 | ![]() | 8732 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGWX5TS65 | Standard | 348 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RGWX5TS65EHRC11 | Ear99 | 8541.29.0095 | 450 | 400 V, 37,5a, 10ohm, 15 V. | 100 ns | TRABENFELD STOPP | 650 V | 132 a | 300 a | 1,9 V @ 15V, 75A | 213 NC | 59ns/243ns | ||||||||||||||||||||||
R6535enzc8 | - - - | ![]() | 4858 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | R6535 | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 846-R6535enzc8 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 35a (TC) | 10V | 115mohm @ 18.1a, 10V | 4V @ 1,21 Ma | 110 nc @ 10 v | ± 20 V | 2600 PF @ 25 V. | - - - | 102W (TC) | ||||||||||||||||||||||
![]() | Umd9nfhatr | 0,4800 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | UMD9 | 150 MW | Umt6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50V | 100 ma | 500NA | 1 NPN, 1 PNP - Voreingenben (Dual) | 300 mV @ 250 ua, 5 mA | 68 @ 5ma, 5v | 250 MHz | 10kohm | 47kohm | |||||||||||||||||||||||||
R6530ENZC8 | - - - | ![]() | 7267 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | R6530 | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 846-R6530enzc8 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 30a (TC) | 10V | 140MOHM @ 14.5A, 10V | 4V @ 960 ähm | 90 nc @ 10 v | ± 20 V | 2100 PF @ 25 V | - - - | 86W (TC) | ||||||||||||||||||||||
![]() | RGW80TS65EHRC11 | 8.0200 | ![]() | 8016 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGW80 | Standard | 214 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RGW80TS65EHRC11 | Ear99 | 8541.29.0095 | 450 | 400 V, 20A, 10OHM, 15 V. | 86 ns | TRABENFELD STOPP | 650 V | 80 a | 160 a | 1,9 V @ 15V, 40a | 110 NC | 43ns/148ns | ||||||||||||||||||||||
![]() | DTC115ECAT116 | 0,2800 | ![]() | 4 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | DTC115 | 200 MW | SST3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | NPN - VORGEPANNT | 300 mV @ 250 ua, 5 mA | 82 @ 5MA, 5V | 250 MHz | 100 Kohms | 100 Kohms | |||||||||||||||||||||||||
![]() | Dta144eubtl | 0,0355 | ![]() | 9067 | 0.00000000 | Rohm Semiconductor | Dta144e | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SC-85 | Dta144 | 200 MW | Umt3f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||
![]() | SH8K32TB1 | 1.7000 | ![]() | 10 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SH8K32 | MOSFET (Metalloxid) | 2W | 5.0x6.0) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 60 v | 4,5a | 65mohm @ 4,5a, 10V | 2,5 V @ 1ma | 10nc @ 5v | 500PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | ZDX130N50 | 1.6372 | ![]() | 9797 | 0.00000000 | Rohm Semiconductor | - - - | Schüttgut | Nicht für Designs | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | ZDX130 | MOSFET (Metalloxid) | To-220fm | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | ZDX130N50CT-ND | Ear99 | 8541.29.0095 | 500 | N-Kanal | 500 V | 13a (TC) | 10V | 520mohm @ 6.5a, 10V | 4,5 V @ 1ma | 40 nc @ 10 v | ± 30 v | 2180 PF @ 25 V. | - - - | 40W (TC) | |||||||||||||||||||||
![]() | RTR020N05TL | 0,9200 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | SC-96 | RTR020 | MOSFET (Metalloxid) | Tsmt3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 45 V | 2a (ta) | 2,5 V, 4,5 V. | 180 Mohm @ 2a, 4,5 V. | 1,5 V @ 1ma | 4.1 NC @ 4.5 V. | ± 12 V | 200 PF @ 10 V. | - - - | 1W (TA) | ||||||||||||||||||||||
![]() | SCT4045DW7TL | 12.2500 | ![]() | 996 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 175 ° C (TJ) | Oberflächenhalterung | To-263-8, d²pak (7 Leitungen + Tab), to-263ca | Sicfet (Silziumkarbid) | To-263-7l | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 750 V | 31a (TJ) | 18V | 59mohm @ 17a, 18 V. | 4,8 V @ 8.89 Ma | 63 NC @ 18 V | +21V, -4v | 1460 PF @ 500 V | - - - | 93W | ||||||||||||||||||||||||
R6530Knzc8 | - - - | ![]() | 6614 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | R6530 | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 846-R6530Knzc8 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 30a (TC) | 10V | 140MOHM @ 14.5A, 10V | 5 V @ 960 ua | 56 NC @ 10 V | ± 20 V | 2350 PF @ 25 V. | - - - | 86W (TC) | ||||||||||||||||||||||
![]() | SP8J62TB1 | - - - | ![]() | 4034 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Veraltet | SP8J62 | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 846-SP8J62TB1TR | Veraltet | 2.500 | - - - | |||||||||||||||||||||||||||||||||||||
![]() | HP8MA2TB1 | 1.8500 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | HP8MA2 | MOSFET (Metalloxid) | 3W (TA) | 8-hsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N und p-kanal | 30V | 18a (ta), 15a (ta) | 9,6 MOHM @ 18A, 10V, 17,9 Mohm @ 15a, 10V | 2,5 V @ 1ma | 22nc @ 10v, 25nc @ 10v | 1100pf @ 15V, 1250pf @ 15V | - - - | ||||||||||||||||||||||||
![]() | R6515KNX3C16 | 3.5300 | ![]() | 956 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | R6515 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-R6515KNX3C16 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 15a (TC) | 10V | 315mohm @ 6.5a, 10V | 5 V @ 430 ähm | 27,5 NC @ 10 V. | ± 20 V | 1050 PF @ 25 V. | - - - | 161W (TC) | |||||||||||||||||||||
![]() | RGW60TS65CHRC11 | 12.8100 | ![]() | 8029 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGW60 | Standard | 178 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RGW60TS65CHRC11 | Ear99 | 8541.29.0095 | 30 | 400 V, 15a, 10ohm, 15 V. | 34 ns | - - - | 650 V | 64 a | 120 a | 1,9 V @ 15V, 30a | 70 µJ (EIN), 220 µJ (AUS) | 84 NC | 37ns/91ns | |||||||||||||||||||||
![]() | R6020YNZ4C13 | 6.5700 | ![]() | 600 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-247-3 | R6020 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 846-R6020YNZ4C13 | 30 | N-Kanal | 600 V | 20A (TC) | 10V, 12V | 185mohm @ 6a, 12V | 6 V @ 1,65 mA | 28 NC @ 10 V | ± 30 v | 1200 PF @ 100 V | - - - | 182W (TC) | ||||||||||||||||||||||||
![]() | 2SAR586D3FRATL | 1.9400 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 2SAR586 | 10 w | To-252 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 80 v | 5 a | 1 µA (ICBO) | 320mv @ 100 mA, 2a | 120 @ 500 mA, 3V | ||||||||||||||||||||||||||||
![]() | Rf6e045ajtcr | 0,6300 | ![]() | 3 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | RF6E045 | MOSFET (Metalloxid) | Tumt6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 4,5a (TA) | 4,5 v | 23,7 MOHM @ 4,5A, 4,5 V. | 1,5 V @ 1ma | 8.1 NC @ 4,5 V. | ± 12 V | 900 PF @ 15 V | - - - | 1W (TC) | ||||||||||||||||||||||
![]() | R8003Knd3tl1 | 2.3200 | ![]() | 988 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | R8003 | MOSFET (Metalloxid) | To-252 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 800 V | 3a (ta) | 10V | 1,8OHM @ 1,5a, 10 V | 4,5 V @ 2MA | 11,5 NC @ 10 V. | ± 20 V | 300 PF @ 100 V | - - - | 45W (TA) | ||||||||||||||||||||||
![]() | RX3G07CGNC16 | 2.4700 | ![]() | 602 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | RX3G07 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-RX3G07CGNC16 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 40 v | 70a (TC) | 4,7mohm @ 70a, 10V | 2,5 V @ 500 ähm | 32 NC @ 10 V | ± 20 V | 2410 PF @ 20 V | - - - | 78W (TC) | ||||||||||||||||||||||
![]() | R6013vnd3tl1 | 3.0200 | ![]() | 90 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | R6013VN | MOSFET (Metalloxid) | To-252 | Herunterladen | 1 (unbegrenzt) | 846-R6013Vnd3tl1tr | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 13a (TC) | 10V, 15 V | 300mohm @ 3a, 15 V | 6,5 V @ 500 ähm | 21 NC @ 10 V | ± 30 v | 900 PF @ 100 V | - - - | 131W (TC) | |||||||||||||||||||||||
![]() | RSD150N06TL | 0,5924 | ![]() | 5921 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | RSD150 | MOSFET (Metalloxid) | CPT3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 15a (ta) | 4 V, 10V | 40mohm @ 15a, 10V | 3V @ 1ma | 18 NC @ 10 V. | ± 20 V | 930 PF @ 10 V | - - - | 20W (TC) | ||||||||||||||||||||||
![]() | Emz1fhat2r | 0,0967 | ![]() | 1483 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | Emz1fhat2 | 150 MW | EMT6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 8.000 | 50V | 150 Ma | 100NA (ICBO) | NPN, PNP | 400mv @ 5 mA, 50 mA / 500mv @ 5 mA, 50 mA | 120 @ 1ma, 6v | 180 MHz, 140 MHz | ||||||||||||||||||||||||||
![]() | RH6P040BHTB1 | 1.8400 | ![]() | 5 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | 8-HSMT (3,2x3) | Herunterladen | 3 (168 Stunden) | UnberÜHrt Ereichen | 846-RH6P040BHTB1CT | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 40a (TC) | 6 V, 10V | 15,6 MOHM @ 40A, 10V | 4v @ 1ma | 16.7 NC @ 10 V. | ± 20 V | 1080 PF @ 50 V | - - - | 59W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus