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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | RGW80TS65GC11 | 5.4600 | ![]() | 152 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Nicht für Designs | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGW80 | Standard | 214 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 400 V, 40a, 10ohm, 15 V. | TRABENFELD STOPP | 650 V | 78 a | 160 a | 1,9 V @ 15V, 40a | 760 µJ (EIN), 720 µJ (AUS) | 110 NC | 44ns/143ns | |||||||||||||||||||||||
![]() | RSD050N10TL | 0,4733 | ![]() | 7552 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | RSD050 | MOSFET (Metalloxid) | CPT3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 5a (ta) | 4 V, 10V | 190mohm @ 5a, 10V | 2,5 V @ 1ma | 14 NC @ 10 V | ± 20 V | 530 PF @ 25 V. | - - - | 15W (TC) | ||||||||||||||||||||||
![]() | RSR020P05Hzgtl | 0,6500 | ![]() | 4719 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-96 | RSR020 | MOSFET (Metalloxid) | Tsmt3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 45 V | 2a (ta) | 4 V, 10V | 190mohm @ 2a, 10V | 3V @ 1ma | 4,5 NC @ 4,5 V. | ± 20 V | 500 PF @ 10 V. | - - - | 700 MW (TA) | ||||||||||||||||||||||
![]() | RGW60TS65DGC11 | 5.9200 | ![]() | 8274 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Nicht für Designs | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGW60 | Standard | 178 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 400 V, 30a, 10ohm, 15 V. | 92 ns | TRABENFELD STOPP | 650 V | 60 a | 120 a | 1,9 V @ 15V, 30a | 480 µJ (EIN), 490 µJ (AUS) | 84 NC | 37ns/114ns | ||||||||||||||||||||||
![]() | R6515Knxc7g | 3.8300 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | R6515 | MOSFET (Metalloxid) | To-220fm | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-R6515Knxc7g | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 15a (ta) | 10V | 315mohm @ 6.5a, 10V | 5 V @ 430 ähm | 27,5 NC @ 10 V. | ± 20 V | 1050 PF @ 25 V. | - - - | 60 W (TC) | |||||||||||||||||||||
![]() | SCT4026DEC11 | 22.3100 | ![]() | 450 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 175 ° C (TJ) | K. Loch | To-247-3 | SCT4026 | Sicfet (Silziumkarbid) | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-SCT4026DEC11 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 750 V | 56a (TC) | 18V | 34mohm @ 29a, 18V | 4,8 V @ 15,4 mA | 94 NC @ 18 V | +21V, -4v | 2320 PF @ 500 V | - - - | 176W | |||||||||||||||||||||
![]() | RSS070N05FW4TB1 | - - - | ![]() | 5107 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Veraltet | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 846-RSS070N05FW4TB1TR | Veraltet | 2.500 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | RSM002N06T2L | 0,4300 | ![]() | 25 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SOT-723 | RSM002 | MOSFET (Metalloxid) | VMT3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | N-Kanal | 60 v | 250 mA (TA) | 2,5 V, 10 V. | 2,4OHM @ 250 mA, 10V | 2,3 V @ 1ma | ± 20 V | 15 PF @ 25 V | - - - | 150 MW (TA) | |||||||||||||||||||||||
![]() | R6015enjtl | 4.0000 | ![]() | 4 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | R6015 | MOSFET (Metalloxid) | Lpts | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 15a (TC) | 10V | 290MOHM @ 6.5a, 10V | 4v @ 1ma | 40 nc @ 10 v | ± 20 V | 910 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||||||
![]() | MP6K31TCR | - - - | ![]() | 3293 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | MP6K31 | MOSFET (Metalloxid) | 2W | Mpt6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | 2 n-kanal (dual) | 60 v | 2a | 290MOHM @ 2a, 10V | 2,5 V @ 1ma | 2nc @ 5v | 110pf @ 10v | Logikpegel -Tor, 4V Laufwerk | ||||||||||||||||||||||||
RRS040P03FRATB | 0,3489 | ![]() | 2760 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | RRS040 | MOSFET (Metalloxid) | 8-Sop | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 4a (ta) | 4 V, 10V | 75mohm @ 4a, 10V | 2,5 V @ 1ma | 5.2 NC @ 5 V | ± 20 V | 480 PF @ 10 V. | - - - | 2W (TA) | ||||||||||||||||||||||||
![]() | RCX100N25 | 2.2500 | ![]() | 466 | 0.00000000 | Rohm Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | RCX100 | MOSFET (Metalloxid) | To-220fm | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | N-Kanal | 250 V | 10a (ta) | 10V | - - - | - - - | ± 30 v | - - - | 40W (TC) | ||||||||||||||||||||||||
![]() | RGTV60TS65GC11 | 5.1400 | ![]() | 168 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Nicht für Designs | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | RGTV60 | Standard | 194 w | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 400 V, 30a, 10ohm, 15 V. | TRABENFELD STOPP | 650 V | 60 a | 120 a | 1,9 V @ 15V, 30a | 570 µJ (EIN), 500 µJ (AUS) | 64 NC | 33ns/105ns | |||||||||||||||||||||||
![]() | RCX080N25 | 1.3000 | ![]() | 442 | 0.00000000 | Rohm Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | RCX080 | MOSFET (Metalloxid) | To-220fm | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | N-Kanal | 250 V | 8a (TC) | 10V | 600mohm @ 4a, 10V | 5v @ 1ma | 15 NC @ 10 V | ± 30 v | 840 PF @ 25 V. | - - - | 2,23W (TA), 35W (TC) | ||||||||||||||||||||||
![]() | Rw1a025apt2cr | - - - | ![]() | 4370 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | RW1A025 | MOSFET (Metalloxid) | 6-wemt | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | P-Kanal | 12 v | 2,5a (TA) | 1,5 V, 4,5 V. | 62mohm @ 2,5a, 4,5 V. | 1v @ 1ma | 16 NC @ 4,5 V | -8v | 2000 PF @ 6 V | - - - | 400 MW (TA) | ||||||||||||||||||||||
![]() | SCT3030AW7TL | 39.5900 | ![]() | 437 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 175 ° C (TJ) | Oberflächenhalterung | To-263-8, d²pak (7 Leitungen + Tab), to-263ca | SCT3030 | Sicfet (Silziumkarbid) | To-263-7 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 70a (TC) | 39mohm @ 27a, 18V | 5,6 V @ 13,3 mA | 104 NC @ 18 V | +22V, -4 v | 1526 PF @ 500 V | - - - | 267W | |||||||||||||||||||||||
![]() | 2SA1576U3HZGT106Q | 0,3800 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | 2SA1576 | 200 MW | Umt3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 500mv @ 5ma, 50 mA | 120 @ 1ma, 6v | 140 MHz | ||||||||||||||||||||||||||
![]() | RW1A030APT2CR | - - - | ![]() | 3626 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | RW1A030 | MOSFET (Metalloxid) | 6-wemt | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | P-Kanal | 12 v | 3a (ta) | 1,5 V, 4,5 V. | 42mohm @ 3a, 4,5 V. | 1v @ 1ma | 22 NC @ 4,5 V. | -8v | 2700 PF @ 6 V | - - - | 700 MW (TA) | ||||||||||||||||||||||
![]() | R8005anjfrgtl | 3.2100 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | R8005 | MOSFET (Metalloxid) | Lpts | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 5a (TC) | 10V | 2,1OHM @ 2,5a, 10 V. | 5v @ 1ma | 20 nc @ 10 v | ± 30 v | 500 PF @ 25 V. | - - - | 120W (TC) | ||||||||||||||||||||||
![]() | 2SA1576U3HZGT106R | 0,3800 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | 2SA1576 | 200 MW | Umt3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 500mv @ 5ma, 5 mA | 120 @ 1ma, 6v | 140 MHz | ||||||||||||||||||||||||||
![]() | SCT3060AlHRC11 | 25.3100 | ![]() | 282 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Rohr | Aktiv | 175 ° C (TJ) | K. Loch | To-247-3 | SCT3060 | Sicfet (Silziumkarbid) | To-247n | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 39a (TC) | 18V | 78mohm @ 13a, 18 V. | 5,6 V @ 6.67 Ma | 58 NC @ 18 V | +22V, -4 v | 852 PF @ 500 V | - - - | 165W | ||||||||||||||||||||||
![]() | R6530KNX3C16 | 6.3600 | ![]() | 1 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | R6530 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 846-R6530Knx3C16 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 30a (TC) | 10V | 140MOHM @ 14.5A, 10V | 5 V @ 960 ua | 56 NC @ 10 V | ± 20 V | 2350 PF @ 25 V. | - - - | 307W (TC) | |||||||||||||||||||||
![]() | SCT2H12NZGC11 | 7.5000 | ![]() | 1654 | 0.00000000 | Rohm Semiconductor | - - - | Rohr | Aktiv | 175 ° C (TJ) | K. Loch | To-3Pfm, SC-93-3 | SCT2H12 | Sicfet (Silziumkarbid) | To-3Pfm | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 1700 v | 3.7a (TC) | 18V | 1,5OHM @ 1,1a, 18 V. | 4 V @ 900 ähm | 14 NC @ 18 V | +22V, -6 v | 184 PF @ 800 V | - - - | 35W (TC) | ||||||||||||||||||||||
![]() | R6018jnjgtl | 4.2600 | ![]() | 626 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | R6018 | MOSFET (Metalloxid) | Lpts | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 18a (TC) | 15 v | 286mohm @ 9a, 15V | 7v @ 4.2 mA | 42 NC @ 15 V | ± 30 v | 1300 PF @ 100 V | - - - | 220W (TC) | ||||||||||||||||||||||
![]() | Umh33ntn | 0,5300 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | UMH33 | 150 MW | Umt6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 20V | 400 ma | 500NA (ICBO) | 2 NPN - Voresingenben (Dual) | 100 mv @ 3ma, 30 mA | 820 @ 10ma, 5V | 35 MHz | 2.2ko | - - - | |||||||||||||||||||||||||
RRS050P03HZgtb | 1.2800 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | RRS050 | MOSFET (Metalloxid) | 8-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 5a (ta) | 4 V, 10V | 50mohm @ 5a, 10V | 2,5 V @ 1ma | 9.2 NC @ 5 V. | ± 20 V | 850 PF @ 10 V | - - - | 2W (TA) | |||||||||||||||||||||||
![]() | RXL035N03TCR | 0,7800 | ![]() | 3 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | Rxl035 | MOSFET (Metalloxid) | Tumt6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 3,5a (TA) | 4 V, 10V | 50 MOHM @ 3,5A, 10V | 2,5 V @ 1ma | 3,3 NC @ 5 V. | ± 20 V | 180 PF @ 10 V. | - - - | 910 MW (TA) | ||||||||||||||||||||||
![]() | HS8K1TB | 0,8800 | ![]() | 4 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 8-udfn Exponierte Pad | HS8K1 | MOSFET (Metalloxid) | 2W (TA) | HSML3030L10 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 10a (ta), 11a (ta) | 14,6 MOHM @ 10a, 10 V, 11,8 Mohm @ 11a, 10 V | 2,5 V @ 1ma | 6nc @ 10v, 7,4nc @ 10v | 348PF @ 15V, 429PF @ 15V | - - - | ||||||||||||||||||||||||
![]() | RQ6A050ZPTR | 0,9500 | ![]() | 2 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | RQ6A050 | MOSFET (Metalloxid) | TSMT6 (SC-95) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 12 v | 5a (ta) | 1,5 V, 4,5 V. | 26mohm @ 5a, 4,5 V. | 1v @ 1ma | 35 NC @ 4,5 V. | ± 10 V | 2850 PF @ 6 V | - - - | 950 MW (TA) | ||||||||||||||||||||||
![]() | DTD743XETL | 0,4600 | ![]() | 3 | 0.00000000 | Rohm Semiconductor | - - - | Band & Rollen (TR) | Nicht für Designs | Oberflächenhalterung | SC-75, SOT-416 | DTD743 | 150 MW | Emt3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 30 v | 200 ma | 500NA | NPN - VORGEPANNT | 300 mV @ 2,5 mA, 50 mA | 140 @ 100 mA, 2V | 260 MHz | 4.7 Kohms | 10 Kohms |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus