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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) | Strom Abfluss (ID) - Maximal |
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![]() | Mch3376-tl-e | - - - | ![]() | 1622 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | MCH3376 | MOSFET (Metalloxid) | 3-mcph | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 1,5a (ta) | 1,8 V, 4,5 V. | 241mohm @ 750 mA, 4,5 V. | 1,4 V @ 1ma | 1,7 NC @ 4,5 V. | ± 10 V | 120 PF @ 10 V | - - - | 800 MW (TA) | |||||||||||||||||||||||||||
![]() | MMBT4403-On | - - - | ![]() | 4175 | 0.00000000 | Onsemi | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 40 v | 600 mA | 100na | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | ||||||||||||||||||||||||||||||||
![]() | BC238A_J35Z | - - - | ![]() | 6170 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BC238 | 500 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.000 | 25 v | 100 ma | 15na | Npn | 600mv @ 5ma, 100 mA | 120 @ 2MA, 5V | 250 MHz | ||||||||||||||||||||||||||||||||
![]() | BDX34BTSTU | - - - | ![]() | 5868 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | BDX34 | 70 w | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | 80 v | 10 a | 500 ähm | PNP | 2,5 V @ 6ma, 3a | 750 @ 3a, 3v | - - - | ||||||||||||||||||||||||||||||||
![]() | FQD5P20TF | - - - | ![]() | 5905 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FQD5 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 200 v | 3.7a (TC) | 10V | 1,4OHM @ 1,85a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||||||||||||
![]() | IRF630B_FP001 | - - - | ![]() | 1027 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf63 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 720 PF @ 25 V. | - - - | 72W (TC) | ||||||||||||||||||||||||||||
![]() | KSB707OTU | - - - | ![]() | 5005 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | - - - | K. Loch | To-220-3 | KSB70 | 1,5 w | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | 60 v | 7 a | 10 µA (ICBO) | PNP | 500mv @ 500 mA, 5a | 60 @ 3a, 1V | - - - | ||||||||||||||||||||||||||||||||
![]() | Nvd5c446nt4g | 2.3300 | ![]() | 6989 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | NVD5C4 | MOSFET (Metalloxid) | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-nvd5c446nt4gtr | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 22A (TA), 105A (TC) | 10V | 3,5 MOHM @ 50A, 10V | 4v @ 250 ähm | 34,3 NC @ 10 V. | ± 20 V | 2300 PF @ 25 V. | - - - | 3.1W (TA), 66W (TC) | ||||||||||||||||||||||||||
![]() | KSC3569Ytu | - - - | ![]() | 4786 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | KSC3569 | 15 w | To-220f-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 400 V | 2 a | 10 µA (ICBO) | Npn | 1v @ 100 mA, 500 mA | 40 @ 100 Ma, 5V | - - - | ||||||||||||||||||||||||||||||||
![]() | 2SC4548D-TD-E | 0,1800 | ![]() | 194 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1.000 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA30N65SMD | - - - | ![]() | 7531 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA30N65 | Standard | 300 w | To-3pn | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2832-fga30N65SMD | Ear99 | 8541.29.0095 | 450 | 400 V, 30a, 6OHM, 15 V. | 35 ns | Feldstopp | 650 V | 60 a | 90 a | 2,5 V @ 15V, 30a | 716 µj (Ein), 208 um (AUS) | 87 NC | 14ns/102ns | ||||||||||||||||||||||||||
![]() | FDG6303N_G | - - - | ![]() | 9100 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | FDG6303 | MOSFET (Metalloxid) | 300 MW | SC-88 (SC-70-6) | - - - | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 25 v | 500 mA | 450MOHM @ 500 Ma, 4,5 V. | 1,5 V @ 250 ähm | 2.3nc @ 4.5V | 50pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | MPSH81_D26Z | - - - | ![]() | 9386 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | MPSH81 | 350 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.000 | - - - | 20V | 50 ma | PNP | 60 @ 5ma, 10V | 600 MHz | - - - | ||||||||||||||||||||||||||||||||
![]() | MPS2222Arlra | - - - | ![]() | 1080 | 0.00000000 | Onsemi | * | Klebeband (CT) Schneiden | Veraltet | MPS222 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mun2213t1g | 0,2000 | ![]() | 2597 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Mun2213 | 338 MW | SC-59 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 50 v | 100 ma | 500NA | NPN - VORGEPANNT | 250 mV @ 300 µA, 10 mA | 80 @ 5ma, 10V | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||
![]() | MTD6N20ET4 | - - - | ![]() | 8435 | 0.00000000 | Onsemi | - - - | Klebeband (CT) Schneiden | Veraltet | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Mtd6n | MOSFET (Metalloxid) | Dpak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 6a (TC) | 700 MOHM @ 3A, 10V | 4v @ 250 ähm | 21 NC @ 10 V | 480 PF @ 25 V. | - - - | |||||||||||||||||||||||||||||||
![]() | BCX19LT1G | 0,2200 | ![]() | 6134 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX19 | 300 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 45 V | 500 mA | 100NA (ICBO) | Npn | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||||
![]() | NTHD5905T1 | - - - | ![]() | 7514 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-smd, Flaches Blei | NTHD59 | MOSFET (Metalloxid) | 1.1W | Chipfet ™ | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | NTHD5905T1OS | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 8v | 3a | 90 MOHM @ 3a, 4,5 V. | 450 MV @ 250 ähm | 9nc @ 4,5V | - - - | Logikpegel -tor | ||||||||||||||||||||||||||||
![]() | MPS2369Arlrp | - - - | ![]() | 4774 | 0.00000000 | Onsemi | - - - | Band & Box (TB) | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | MPS236 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 15 v | 200 ma | 400na | Npn | 500mv @ 10 mA, 100 mA | 20 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||||
![]() | DTC114TET1 | - - - | ![]() | 9370 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | Oberflächenhalterung | SC-75, SOT-416 | DTC114 | 200 MW | SC-75, SOT-416 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 50 v | 100 ma | 500NA | NPN - VORGEPANNT | 250 mV @ 1ma, 10 mA | 160 @ 5ma, 10V | 10 Kohms | ||||||||||||||||||||||||||||||||
![]() | FQI9N25CTU | - - - | ![]() | 1434 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Fqi9 | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 8.8a (TC) | 10V | 430mohm @ 4.4a, 10V | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 710 PF @ 25 V. | - - - | 3.13W (TA), 74W (TC) | ||||||||||||||||||||||||||||
![]() | FJV4104RMTF | - - - | ![]() | 7665 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV410 | 200 MW | SOT-23-3 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||
![]() | TF262TH-5-TL-H | - - - | ![]() | 8042 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 3-smd, flaches blei | TF262 | 100 MW | Vtfp | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | N-Kanal | 3.5PF @ 2V | 210 µa @ 2 V | 200 mV @ 1 µA | 1 Ma | ||||||||||||||||||||||||||||||||||
![]() | 55GN01MA-TL-E | 0,4000 | ![]() | 1 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | 55GN01 | 400 MW | 3-MCP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 10db @ 1ghz | 10V | 70 Ma | Npn | 100 @ 10ma, 5V | 4,5 GHz ~ 5,5 GHz | 1,9 dB @ 1 GHz | |||||||||||||||||||||||||||||||
![]() | ATP102-TL-H | - - - | ![]() | 1098 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | ATPAK (2 Leads+Tab) | ATP102 | MOSFET (Metalloxid) | Atpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 40a (ta) | 4,5 V, 10 V. | 18,5 MOHM @ 20A, 10V | - - - | 34 NC @ 10 V. | ± 20 V | 1490 PF @ 10 V. | - - - | 40W (TC) | |||||||||||||||||||||||||||
![]() | NVD5117PLT4G-VF01 | 3.0100 | ![]() | 3805 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | NVD5117 | MOSFET (Metalloxid) | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 60 v | 11A (TA), 61A (TC) | 4,5 V, 10 V. | 16mohm @ 29a, 10V | 2,5 V @ 250 ähm | 85 NC @ 10 V | ± 20 V | 4800 PF @ 25 V. | - - - | 4.1W (TA), 118W (TC) | |||||||||||||||||||||||||||
![]() | NDT03N40ZT3G | - - - | ![]() | 4863 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | NDT03 | MOSFET (Metalloxid) | SOT-223 (to-261) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 400 V | 500 Ma (TC) | 10V | 3.4ohm @ 600 mA, 10 V. | 4,5 V @ 50 µA | 6.6 NC @ 10 V | ± 30 v | 140 PF @ 50 V | - - - | 2W (TC) | ||||||||||||||||||||||||||||
![]() | NSBC114YPDXV6T5G | - - - | ![]() | 8178 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | Oberflächenhalterung | SOT-563, SOT-666 | NSBC114 | 500 MW | SOT-563 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | 50V | 100 ma | 500NA | 1 NPN, 1 PNP - Voreingenben (Dual) | 250 mV @ 300 µA, 10 mA | 80 @ 5ma, 10V | - - - | 10kohm | 47kohm | ||||||||||||||||||||||||||||||
![]() | BC558BTAR | - - - | ![]() | 7702 | 0.00000000 | Onsemi | - - - | Band & Box (TB) | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BC558 | 500 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||
![]() | BDW93CTU | 1.0300 | ![]() | 419 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | Bdw93 | 80 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 100 v | 12 a | 1ma | NPN - Darlington | 3v @ 100 mA, 10a | 750 @ 5a, 3v | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus