Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | NTJD4001NT2G | - - - | ![]() | 8400 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | NTJD4001 | MOSFET (Metalloxid) | 272 MW | SC-88/SC70-6/SOT-363 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 30V | 250 Ma | 1,5OHM @ 10 mA, 4V | 1,5 V @ 100 µA | 1,3nc @ 5v | 33pf @ 5v | - - - | ||||||||||||||||||||||||||||
![]() | FDT86244 | 0,8900 | ![]() | 2093 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | FDT86 | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 150 v | 2.8a (TC) | 6 V, 10V | 128mohm @ 2,8a, 10V | 4v @ 250 ähm | 7 NC @ 10 V | ± 20 V | 395 PF @ 75 V | - - - | 2.2W (TA) | |||||||||||||||||||||||||
![]() | FQB65N06TM | - - - | ![]() | 1159 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FQB6 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 65a (TC) | 10V | 16mohm @ 32.5a, 10V | 4v @ 250 ähm | 65 NC @ 10 V | ± 25 V | 2410 PF @ 25 V. | - - - | 3,75W (TA), 150W (TC) | ||||||||||||||||||||||||||
![]() | FDD390N15A | 1.3600 | ![]() | 4848 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FDD390 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 26a (TC) | 10V | 40mohm @ 26a, 10V | 4v @ 250 ähm | 18,6 NC @ 10 V. | ± 20 V | 1285 PF @ 75 V | - - - | 63W (TC) | |||||||||||||||||||||||||
![]() | FQP18N50V2 | - - - | ![]() | 3989 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | FQP1 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 18a (TC) | 10V | 265mohm @ 9a, 10V | 5 V @ 250 ähm | 55 NC @ 10 V | ± 30 v | 3290 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||||||||||||||
![]() | FQI9N15TU | - - - | ![]() | 2015 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Fqi9 | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 150 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 25 V | 410 PF @ 25 V. | - - - | 3,75W (TA), 75W (TC) | ||||||||||||||||||||||||||
![]() | Ntd4906nt4g | - - - | ![]() | 6671 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | NTD49 | MOSFET (Metalloxid) | Dpak | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 10.3a (TA), 54a (TC) | 4,5 V, 10 V. | 5,5 MOHM @ 30a, 10V | 2,2 V @ 250 ähm | 24 nc @ 10 v | ± 20 V | 1932 PF @ 15 V | - - - | 1,38W (TA), 37,5W (TC) | ||||||||||||||||||||||||||
![]() | NDF11N50ZG | - - - | ![]() | 5649 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | NDF11 | MOSFET (Metalloxid) | To-220fp | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 12a (TC) | 10V | 520mohm @ 4,5a, 10V | 4,5 V @ 100 µA | 69 NC @ 10 V | ± 30 v | 1645 PF @ 25 V. | - - - | 39W (TC) | ||||||||||||||||||||||||||
![]() | FDC638APZ | 0,6300 | ![]() | 64 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC638 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4,5a (TA) | 2,5 V, 4,5 V. | 43mohm @ 4,5a, 4,5 V. | 1,5 V @ 250 ähm | 12 NC @ 4,5 V. | ± 12 V | 1000 PF @ 10 V | - - - | 1.6W (TA) | |||||||||||||||||||||||||
![]() | 2N3906BU | 0,3600 | ![]() | 32 | 0.00000000 | Onsemi | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2N3906 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 10.000 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||
![]() | 2SA1523 | 0,0900 | ![]() | 4158 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 500 | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6303N_G | - - - | ![]() | 9100 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | FDG6303 | MOSFET (Metalloxid) | 300 MW | SC-88 (SC-70-6) | - - - | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 25 v | 500 mA | 450MOHM @ 500 Ma, 4,5 V. | 1,5 V @ 250 ähm | 2.3nc @ 4.5V | 50pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||
![]() | MCH6660-TL-W | - - - | ![]() | 7006 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 6-smd, Flache Leitungen | MCH6660 | MOSFET (Metalloxid) | 800 MW | 6-mcph | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 2a, 1,5a | 136mohm @ 1a, 4,5 V. | 1,3 V @ 1ma | 1,8nc @ 4,5V | 128PF @ 10V | Logikpegel -Tor, 1,8 V Auftwerk | |||||||||||||||||||||||||||
![]() | FMS6G15US60 | - - - | ![]() | 7785 | 0.00000000 | Onsemi | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 25 Uhr-aa | Fms6 | 73 w | DREIPHASENBRÜCKENGLECHRICHTER | 25 Uhr-aa | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | Drei -Phase -wechselrichter | - - - | 600 V | 15 a | 2,7 V @ 15V, 15a | 250 µA | Ja | 935 PF @ 30 V | ||||||||||||||||||||||||||||
![]() | Fdn336p | 0,4500 | ![]() | 25 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FDN336 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 1,3a (ta) | 2,5 V, 4,5 V. | 200mohm @ 1,3a, 4,5 V. | 1,5 V @ 250 ähm | 5 NC @ 4,5 V. | ± 8 v | 330 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||||||||||||
![]() | ISL9V5045S3ST-F085 | 5.2100 | ![]() | 1 | 0.00000000 | Onsemi | Automotive, AEC-Q101, EcoSospark® | Band & Rollen (TR) | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | ISL9v5045 | Logik | 300 w | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | 300 V, 1kohm, 5V | - - - | 480 v | 51 a | 1,6 V @ 4V, 10a | - - - | 32 NC | -/10,8 µs | |||||||||||||||||||||||||||
![]() | FDMT80040DC | 11.7100 | ![]() | 435 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | FDMT80040 | MOSFET (Metalloxid) | 8-Dual Cool ™ 88 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 420a (TC) | 6 V, 10V | 0,56 MOHM @ 64A, 10 V. | 4v @ 250 ähm | 338 NC @ 10 V. | ± 20 V | 26110 PF @ 20 V | - - - | 156W (TC) | |||||||||||||||||||||||||
![]() | HGT1S10N120BNS | - - - | ![]() | 4434 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | HGT1S10 | Standard | 298 w | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 960 V, 10a, 10ohm, 15 V. | Npt | 1200 V | 35 a | 80 a | 2,7 V @ 15V, 10a | 320 µJ (EIN), 800 µJ (AUS) | 100 nc | 23ns/165ns | ||||||||||||||||||||||||||
![]() | Ntd5865nt4g | - - - | ![]() | 8423 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | NTD58 | MOSFET (Metalloxid) | Dpak | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 43a (TC) | 10V | 18MOHM @ 20A, 10V | 4v @ 250 ähm | 23 NC @ 10 V | ± 20 V | 1261 PF @ 25 V. | - - - | 71W (TC) | ||||||||||||||||||||||||||
![]() | IRFU120ATU | - - - | ![]() | 5690 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | IRFU1 | MOSFET (Metalloxid) | I-Pak | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 70 | N-Kanal | 100 v | 8.4a (TC) | 10V | 200mohm @ 4.2a, 10V | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 480 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | ||||||||||||||||||||||||||
![]() | NTMFS4983NFT3G | - - - | ![]() | 1771 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn, 5 Leads | NTMFS4983 | MOSFET (Metalloxid) | 5-DFN (5x6) (8-SoFL) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 30 v | 22a (TA), 106a (TC) | 4,5 V, 10 V. | 2,1 MOHM @ 30a, 10V | 2,3 V @ 1ma | 47,9 NC @ 10 V. | ± 20 V | 3250 PF @ 15 V | - - - | 1,7W (TA), 38W (TC) | |||||||||||||||||||||||||
![]() | FDV301N_D87Z | - - - | ![]() | 9540 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FDV301 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 10.000 | N-Kanal | 25 v | 220 Ma (TA) | 2,7 V, 4,5 V. | 4OHM @ 400 mA, 4,5 V. | 1,06 V @ 250 ähm | 0,7 NC @ 4,5 V. | 8v | 9.5 PF @ 10 V. | - - - | 350 MW (TA) | ||||||||||||||||||||||||||
![]() | FQP13N50 | - - - | ![]() | 8200 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | FQP13 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 12,5a (TC) | 10V | 430mohm @ 6.25a, 10V | 5 V @ 250 ähm | 60 nc @ 10 v | ± 30 v | 2300 PF @ 25 V. | - - - | 170W (TC) | |||||||||||||||||||||||||
![]() | Dta114y | 0,0200 | ![]() | 70 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | Dta114 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.21.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||
![]() | NVMFS5C646NLWFT3G | - - - | ![]() | 7290 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Abgebrochen bei Sic | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn, 5 Leads | NVMFS5 | MOSFET (Metalloxid) | 5-DFN (5x6) (8-SoFL) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 60 v | 20A (TA), 93A (TC) | 4,5 V, 10 V. | 4.7mohm @ 50a, 10V | 2v @ 250 ähm | 33.7 NC @ 10 V. | ± 20 V | 2164 PF @ 25 V. | - - - | 3.7W (TA), 79W (TC) | |||||||||||||||||||||||||
![]() | FJN4303RBU | - - - | ![]() | 5253 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | FJN430 | 300 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 200 MHz | 22 Kohms | 22 Kohms | |||||||||||||||||||||||||||||
![]() | SFT1452-H | - - - | ![]() | 9549 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | SFT145 | MOSFET (Metalloxid) | Ipak/tp | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 250 V | 3a (ta) | 10V | 2,4OHM @ 1,5a, 10V | 4,5 V @ 1ma | 4.2 NC @ 10 V | ± 30 v | 210 PF @ 20 V | - - - | 1W (TA), 26W (TC) | ||||||||||||||||||||||||||
![]() | NTTFS015P03P8ZTWG | 0,8000 | ![]() | 4 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | NTTFS015 | MOSFET (Metalloxid) | 8-WDFN (3,3x3,3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | P-Kanal | 30 v | 13,4a (TA), 47,6a (TC) | 4,5 V, 10 V. | 9,3mohm @ 12a, 10V | 3v @ 250 ähm | 62,3 NC @ 10 V | ± 25 V | 2706 PF @ 15 V | - - - | 2,66W (TA), 33,8W (TC) | |||||||||||||||||||||||||
![]() | FDC658APG | - - - | ![]() | 3188 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | FDC658 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-FDC658APGTR | Veraltet | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | FGB20N60SFD | - - - | ![]() | 6933 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FGB20N60 | Standard | 208 w | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | 400 V, 20A, 10OHM, 15 V. | 34 ns | Feldstopp | 600 V | 40 a | 60 a | 2,8 V @ 15V, 20a | 370 µJ (EIN), 160 µJ (AUS) | 65 NC | 13ns/90ns |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus