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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkt (Hfe) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | BD244BG | - - - | ![]() | 8670 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | BD244 | 65 w | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 80 v | 6 a | 700 ähm | PNP | 1,5 V @ 1a, 6a | 15 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||||||
![]() | FDS6630A | - - - | ![]() | 1718 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS66 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 6,5a (ta) | 4,5 V, 10 V. | 38mohm @ 6.5a, 10V | 3v @ 250 ähm | 7 NC @ 5 V | ± 20 V | 460 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||
![]() | Fh105a-tr-e | - - - | ![]() | 1672 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | FH105 | 150 MW | 6-MCP | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 10 dB @ 1,5 GHz | 10V | 30 ma | Npn | 0,95 @ 10 Ma, 5V | 8GHz | 1,4 dB bei 1,5 GHz | ||||||||||||||||||||||||||||||
![]() | HUF75637S3ST | - - - | ![]() | 1226 | 0.00000000 | Onsemi | Ultrafet ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | HUF75 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 44a (TC) | 10V | 30mohm @ 44a, 10V | 4v @ 250 ähm | 108 NC @ 20 V | ± 20 V | 1700 PF @ 25 V. | - - - | 155W (TC) | ||||||||||||||||||||||||||
![]() | BC547_J35Z | - - - | ![]() | 8620 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BC547 | 500 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||||||
![]() | NTP190N65S3HF | 4.4000 | ![]() | 4988 | 0.00000000 | Onsemi | FRFET®, Superfet® III | Rohr | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | NTP190 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 20A (TC) | 10V | 190mohm @ 10a, 10V | 5 V @ 430 ähm | 34 NC @ 10 V. | ± 30 v | 1610 PF @ 400 V | - - - | 162W (TC) | |||||||||||||||||||||||||
![]() | SJE6429 | 0,3700 | ![]() | 7 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||
![]() | BCW69 | - - - | ![]() | 9384 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCW69 | 350 MW | SOT-23-3 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 45 V | 100 ma | 100NA (ICBO) | PNP | 300 mV @ 500 µA, 10 mA | 120 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||||||
![]() | NSS20201MR6T1G | 0,6100 | ![]() | 3533 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | NSS20201 | 460 MW | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 20 v | 2 a | 100na | Npn | 150 mV @ 100 mA, 1a | 200 @ 1a, 5V | 200 MHz | |||||||||||||||||||||||||||||
![]() | BF422ZL1 | - - - | ![]() | 3042 | 0.00000000 | Onsemi | - - - | Band & Box (TB) | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | BF422 | 830 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 250 V | 50 ma | - - - | Npn | 500 mv @ 2MA, 20 mA | 50 @ 25ma, 20V | 60 MHz | |||||||||||||||||||||||||||||
![]() | BD242B | - - - | ![]() | 2683 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | BD242 | 40 w | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 80 v | 3 a | 300 µA | PNP | 1,2 V @ 600 Ma, 3a | 25 @ 1a, 4V | 3MHz | |||||||||||||||||||||||||||||
![]() | FDD6682 | - - - | ![]() | 7577 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FDD668 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 75A (TA) | 4,5 V, 10 V. | 6,2 Mohm @ 17a, 10V | 3v @ 250 ähm | 31 NC @ 5 V. | ± 20 V | 2400 PF @ 15 V | - - - | 71W (TA) | ||||||||||||||||||||||||||
![]() | NXH80T120L2Q0P2G | 55.4179 | ![]() | 2527 | 0.00000000 | Onsemi | - - - | Tablett | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | NXH80T120 | 158 w | Standard | 20-PIM/Q0Pack (55x32,5) | Herunterladen | 488-NXH80T120L2Q0P2G | Ear99 | 8541.29.0095 | 24 | Drei -Level -Wechselrichter | TRABENFELD STOPP | 1200 V | 67 a | 2,85 V @ 15V, 80a | 300 µA | Ja | 19.4 NF @ 20 V. | |||||||||||||||||||||||||||||
![]() | NDS0610-PG | - - - | ![]() | 4160 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NDS0610-PGTR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 60 v | 120 Ma (TA) | 4,5 V, 10 V. | 10ohm @ 500 mA, 10V | 3,5 V @ 1ma | 2,5 NC @ 10 V. | ± 20 V | 79 PF @ 25 V. | - - - | 360 MW (TA) | ||||||||||||||||||||||||||
![]() | 2n5087bu | - - - | ![]() | 7120 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2n5087 | 625 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1.000 | 50 v | 100 ma | 50na | PNP | 300 mV @ 1ma, 10 mA | 250 @ 100 µA, 5V | 40 MHz | ||||||||||||||||||||||||||||||
![]() | Fqd17p06tf | - - - | ![]() | 1633 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Fqd1 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 12a (TC) | 10V | 135mohm @ 6a, 10V | 4v @ 250 ähm | 27 NC @ 10 V | ± 25 V | 900 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | ||||||||||||||||||||||||||
![]() | BC859CMTF | - - - | ![]() | 4743 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC859 | 310 MW | SOT-23-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||
![]() | NGP15N41CL | - - - | ![]() | 8813 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | NGP15 | Logik | 107 w | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | NGP15N41CLOS | Ear99 | 8541.29.0095 | 50 | 300 V, 6,5a, 1kohm | - - - | 440 v | 15 a | 50 a | 2,2 V @ 4V, 10a | - - - | -/4 µs | ||||||||||||||||||||||||||
![]() | HUFA76413P3 | - - - | ![]() | 3176 | 0.00000000 | Onsemi | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Hufa76 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 23a (TC) | 4,5 V, 10 V. | 49mohm @ 23a, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 16 v | 645 PF @ 25 V. | - - - | 60 W (TC) | ||||||||||||||||||||||||||
![]() | MPSA43RLRAG | - - - | ![]() | 9775 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | MPSA43 | 625 MW | To-92 (to-226) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 200 v | 500 mA | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 25 @ 1ma, 10V | 50 MHz | ||||||||||||||||||||||||||||||
![]() | FQD16N15TF | - - - | ![]() | 4861 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Fqd1 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 150 v | 11,8a (TC) | 10V | 160MOHM @ 5.9a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 25 V | 910 PF @ 25 V. | - - - | 2,5 W (TA), 55 W (TC) | ||||||||||||||||||||||||||
![]() | NTF2955PT1G | - - - | ![]() | 8175 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | NTF295 | MOSFET (Metalloxid) | SOT-223 (to-261) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 60 v | 1.7a (ta) | 10V | 185mohm @ 2,4a, 10V | 4v @ 1ma | 14.3 NC @ 10 V. | ± 20 V | 492 PF @ 25 V. | - - - | 1W (TA) | ||||||||||||||||||||||||||
![]() | FCPF250N65S3L1 | - - - | ![]() | 6746 | 0.00000000 | Onsemi | Superfet® III | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FCPF250 | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-FCPF250N65S3L1-488 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 12a (TC) | 10V | 250 Mohm @ 6a, 10 V | 4,5 V @ 1,2 mA | 24 nc @ 10 v | ± 30 v | 1010 PF @ 400 V | - - - | 31W (TC) | ||||||||||||||||||||||||
![]() | NVMFD5C680NLT1G | 1.7500 | ![]() | 8997 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | NVMFD5 | MOSFET (Metalloxid) | 3W (TA), 19W (TC) | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.500 | 2 n-kanal (dual) | 60 v | 7,5a (TA), 26a (TC) | 28mohm @ 5a, 10V | 2,2 V @ 13 µA | 2nc @ 4,5V | 350pf @ 25v | - - - | |||||||||||||||||||||||||||
![]() | CPH6311-tl-e | 0,1800 | ![]() | 141 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-cph | - - - | Nicht Anwendbar | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 5a (ta) | 42mohm @ 3a, 4,5 V. | - - - | 31 NC @ 10 V | 1230 PF @ 10 V | - - - | 1.6W (TA) | ||||||||||||||||||||||||||||||
![]() | SMMUN2114LT1G | 0,3300 | ![]() | 30 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Smmun2114 | 246 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 250 mV @ 300 µA, 10 mA | 80 @ 5ma, 10V | 10 Kohms | 47 Kohms | |||||||||||||||||||||||||||||
![]() | FCH165N65S3R0-F155 | 6.4200 | ![]() | 444 | 0.00000000 | Onsemi | Superfet® III | Rohr | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | FCH165 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 450 | N-Kanal | 650 V | 19A (TC) | 10V | 165mohm @ 9.5a, 10V | 4,5 V @ 1,9 mA | 39 NC @ 10 V. | ± 30 v | 1500 PF @ 400 V | - - - | 154W (TC) | |||||||||||||||||||||||||
![]() | 2v7002kt1g | 0,3300 | ![]() | 1 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 2v7002 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 60 v | 320 Ma (TA) | 4,5 V, 10 V. | 1,6OHM @ 500 mA, 10 V. | 2,3 V @ 250 ähm | 0,7 NC @ 4,5 V. | ± 20 V | 24.5 PF @ 20 V | - - - | 300 MW (TJ) | |||||||||||||||||||||||||
![]() | SJ6522AG | 2.5400 | ![]() | 801 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||
FDMC8030 | 1.4400 | ![]() | 2554 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMC80 | MOSFET (Metalloxid) | 800 MW | 8-Power33 (3x3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 40V | 12a | 10mohm @ 12a, 10V | 2,8 V @ 250 ähm | 30nc @ 10v | 1975pf @ 20V | Logikpegel -tor |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus