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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) |
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![]() | TLZ51-GS18 | 0,0335 | ![]() | 5563 | 0.00000000 | Vishay General Semiconductor - DioDes Division | Tlz | Band & Rollen (TR) | Aktiv | - - - | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | TLZ51 | 500 MW | SOD-80 Minimelf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 10.000 | 1,5 V @ 200 Ma | 40 NA @ 45.6 V. | 51 v | 100 Ohm | |||||||||||||
DNA40U2200gu | 20.9800 | ![]() | 116 | 0.00000000 | Ixys | - - - | Rohr | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | 5-sip | DNA40U2200 | Standard | GUFP | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 238-DNA40U2200gu | Ear99 | 8541.10.0080 | 14 | 1,28 V @ 30 a | 40 µA @ 2200 V | 40 a | DRIPHASE | 2,2 kv | |||||||||||||
![]() | DLA100B800LB-Trr | 18.5219 | ![]() | 6902 | 0.00000000 | Ixys | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 9-Powermd | DLA100 | Standard | 9-smpd-b | - - - | ROHS3 -KONFORM | UnberÜHrt Ereichen | 238-DLA100B800LB-Trrtr | Ear99 | 8541.10.0080 | 200 | 1,45 V @ 100 a | 10 µa @ 800 V | 124 a | Einphase | 800 V | |||||||||||||
![]() | MDNA280UB2200PT | 151.8889 | ![]() | 9307 | 0.00000000 | Ixys | - - - | Kasten | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | E2 | MDNA280 | Standard | E2 | - - - | ROHS3 -KONFORM | UnberÜHrt Ereichen | 238-mDNA280UB2200PT | Ear99 | 8541.10.0080 | 28 | 1,75 V @ 270 a | 100 µA @ 2200 V | 280 a | DREIPHASE (Bremsen) | 2,2 kv | |||||||||||||
![]() | BZX55C3V0 | 0,0200 | ![]() | 4234 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 7.295 | 1,3 V @ 100 mA | 4 µa @ 1 V | 3 v | 85 Ohm | ||||||||||||||||
![]() | 1N970B | 1.8400 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 5 µA @ 18,2 V. | 24 v | 33 Ohm | |||||||||||||||||
![]() | KBU8D | - - - | ![]() | 4108 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 200 | 1 V @ 8 a | 10 µA @ 200 V. | 8 a | Einphase | 200 v | ||||||||||||||||
![]() | KBU6D | 0,5400 | ![]() | 5011 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 425 | 1 V @ 6 a | 10 µA @ 200 V. | 6 a | Einphase | 200 v | ||||||||||||||||
![]() | 1N959B | 3.2100 | ![]() | 122 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 94 | 50 µa @ 6,2 V | 8.2 v | 6,5 Ohm | |||||||||||||||||
![]() | 3n258 | 0,5200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-sip, kbpm | Standard | Kbpm | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 30 | 1,1 V @ 3.14 a | 5 µa @ 800 V | 2 a | Einphase | 800 V | ||||||||||||||||
![]() | FLZ8V2B | 0,0200 | ![]() | 5084 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 4,230 | 1,2 V @ 200 Ma | 300 na @ 5 v | 8 v | 6.6 Ohm | ||||||||||||||||
![]() | KBU6A | 1.1100 | ![]() | 287 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 287 | 1 V @ 6 a | 10 µa @ 50 V | 6 a | Einphase | 50 v | ||||||||||||||||
![]() | KBU8B | 1.0000 | ![]() | 3826 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 200 | 1 V @ 8 a | 10 µa @ 100 V. | 8 a | Einphase | 100 v | ||||||||||||||||
![]() | 1N5395 | - - - | ![]() | 4623 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 8.000 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 400 V | 1,4 V @ 1,5 a | 5 µa @ 400 V | -55 ° C ~ 150 ° C. | 1,5a | 25pf @ 4v, 1 MHz | |||||||||||||||
![]() | BZX55C5v6 | 0,0400 | ![]() | 149 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 1 v | 5.6 v | 25 Ohm | ||||||||||||||||
![]() | GBU2506-HF | 1.0898 | ![]() | 7727 | 0.00000000 | Comchip -technologie | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBU | GBU2506 | Standard | GBU | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-GBU2506-HF | Ear99 | 8541.10.0080 | 20 | 1 V @ 12.5 a | 5 µa @ 600 V | 25 a | Einphase | 600 V | |||||||||||||
![]() | AES2CF-HF | 0,1084 | ![]() | 6622 | 0.00000000 | Comchip -technologie | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | Do-214AC, SMA | AES2CF | Standard | Smaf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 10.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 150 v | 950 mV @ 2 a | 35 ns | 5 µa @ 150 V | -55 ° C ~ 150 ° C. | 2a | - - - | ||||||||||||
![]() | GBU2504-HF | 1.0898 | ![]() | 8229 | 0.00000000 | Comchip -technologie | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBU | GBU2504 | Standard | GBU | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-GBU2504-HF | Ear99 | 8541.10.0080 | 20 | 1 V @ 12.5 a | 5 µa @ 400 V | 25 a | Einphase | 400 V | |||||||||||||
![]() | SS54BF-HF | 0,1697 | ![]() | 4143 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | Do-221aa, SMB Flat Leads | SS54 | Schottky | SMBF | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 5.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 40 v | 550 mV @ 5 a | 1 ma @ 40 v | -55 ° C ~ 150 ° C. | 5a | 800PF @ 4V, 1 MHz | |||||||||||||
![]() | GBU2502-HF | 1.0898 | ![]() | 5768 | 0.00000000 | Comchip -technologie | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBU | GBU2502 | Standard | GBU | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-GBU2502-HF | Ear99 | 8541.10.0080 | 20 | 1 V @ 12.5 a | 5 µa @ 200 V. | 25 a | Einphase | 200 v | |||||||||||||
![]() | GP3D015A120A | 7.9700 | ![]() | 10 | 0.00000000 | Semiq | AMP+™ | Rohr | Aktiv | K. Loch | To-220-2 | GP3D015 | SIC (Silicon Carbide) Schottky | To-220-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 1560-GP3D015A120A | Ear99 | 8541.10.0080 | 50 | Keine Erholungszeit> 500 mA (IO) | 1200 V | 1,6 V @ 15 a | 0 ns | 30 µA @ 1200 V | -55 ° C ~ 175 ° C. | 15a | 962pf @ 1V, 1MHz | ||||||||||
![]() | NTE633 | 0,1100 | ![]() | 9 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | Oberflächenhalterung | SC-76, SOD-323 | Standard | SOD-323 | Herunterladen | ROHS3 -KONFORM | 2368-NTE633 | Ear99 | 8541.10.0070 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 1,25 V @ 150 mA | 4 ns | 1 µa @ 75 V | 150 ° C. | 250 Ma | 1,5PF @ 0V, 1 MHz | |||||||||||||
![]() | NTE6356 | 68.1300 | ![]() | 4416 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | Bolzenhalterung | DO-203AA, DO-9, Stud | Standard | Do-9 | Herunterladen | ROHS3 -KONFORM | 2368-NTE6356 | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 40 mA @ 600 V | -40 ° C ~ 180 ° C. | 300a | - - - | |||||||||||||||
![]() | NTE627 | 1.7100 | ![]() | 1 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | K. Loch | To-220-3 | Standard | To-220 | Herunterladen | ROHS3 -KONFORM | 2368-NTE627 | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 2 Unabhängig | 200 v | 8a | 950 mv @ 6 a | 35 ns | 10 µA @ 200 V. | -55 ° C ~ 150 ° C. | |||||||||||||
![]() | 1N755a | 0,1500 | ![]() | 132 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 2368-1n755a | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 200 Ma | 100 na @ 1 v | 7,5 v | 6 Ohm | |||||||||||||||
![]() | 1N757a | 0,1500 | ![]() | 6 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 2368-1n757a | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 200 Ma | 100 na @ 1 v | 9.1 v | 10 Ohm | |||||||||||||||
![]() | NTE5949 | 6.5900 | ![]() | 6 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | Bolzenhalterung | DO-203AA, DO-5, Stud | Standard | Do-5 | Herunterladen | ROHS3 -KONFORM | 2368-NTE5949 | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 400 V | 1,5 V @ 15 a | 10 mA @ 400 V | -65 ° C ~ 175 ° C. | 15a | - - - | ||||||||||||||
![]() | RGP15G | 0,2800 | ![]() | 500 | 0.00000000 | NTE Electronics, Inc. | RGP15 | Tasche | Aktiv | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | Rohs Nick Konform | 2368-RGP15G | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 400 V | 1,3 V @ 1,5 a | 150 ns | 5 µa @ 400 V | - - - | 1,5a | 25pf @ 4v, 1 MHz | |||||||||||||
![]() | 1N4736a | 0,1400 | ![]() | 173 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | ± 0,5% | -65 ° C ~ 20 ° C. | K. Loch | Axial | 1 w | Axial | Herunterladen | ROHS3 -KONFORM | 2368-1n4736a | Ear99 | 8541.10.0050 | 1 | 10 µa @ 4 V. | 6,8 v | 3,5 Ohm | ||||||||||||||||
![]() | 1N4748a | 0,1400 | ![]() | 369 | 0.00000000 | NTE Electronics, Inc. | - - - | Tasche | Aktiv | ± 0,5% | -65 ° C ~ 20 ° C. | K. Loch | Axial | 1 w | Axial | Herunterladen | ROHS3 -KONFORM | 2368-1n4748a | Ear99 | 8541.10.0050 | 1 | 5 µa @ 16,7 V | 22 v | 23 Ohm |
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