Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Geschwindigkeit | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 1N756A_NL | - - - | ![]() | 5328 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 16.000 | 1,5 V @ 200 Ma | 100 na @ 1 v | 8.2 v | 8 Ohm | |||||||||||
![]() | S1J | 1.0000 | ![]() | 8096 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC, SMA | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,1 V @ 1 a | 1,5 µs | 5 µa @ 600 V | -50 ° C ~ 150 ° C. | 1a | - - - | ||||||||||||
![]() | 1N914B | 0,0300 | ![]() | 140 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | Do-35 | Herunterladen | Ear99 | 8541.10.0070 | 11.539 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 200 Ma | 4 ns | 5 µa @ 75 V | -65 ° C ~ 175 ° C. | 200 ma | 4PF @ 0V, 1MHz | ||||||||||||
![]() | 1N5235BTA | 0,0600 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 200 ° C | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 5.000 | 1,1 V @ 200 Ma | 3 µa @ 4,8 V. | 6,8 v | 5 Ohm | |||||||||||
![]() | FLZ12VB | 0,0200 | ![]() | 1854 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 10.000 | 1,2 V @ 200 Ma | 133 na @ 9 v | 11.7 v | 9,5 Ohm | |||||||||||||
![]() | MMSZ36VCF-FS | - - - | ![]() | 9277 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 150 ° C (TJ) | Oberflächenhalterung | SOD-123F | 1 w | SOD-123F | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0050 | 2.535 | 1,2 V @ 200 Ma | 1 µa @ 27 V | 36 v | 40 Ohm | |||||||||||
MMSZ5232B | 0,0200 | ![]() | 303 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 3 V | 5.6 v | 17 Ohm | |||||||||||
![]() | Flz15va | 0,0200 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 11 v | 13,8 v | 13,3 Ohm | |||||||||||||
![]() | Fypf1010dntu | 0,6300 | ![]() | 383 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 Full Pack | Schottky | To-220f-3 | Herunterladen | Ear99 | 8541.10.0080 | 477 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 100 v | 10a | 950 mv @ 10 a | 1 ma @ 100 v | -40 ° C ~ 150 ° C. | |||||||||||||
![]() | MMBZ5232B | 0,0200 | ![]() | 8809 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.10.0050 | 14.852 | 900 mv @ 10 mA | 5 µa @ 3 V | 5.6 v | 11 Ohm | ||||||||||||||
![]() | 1N4737ATR | 0,0300 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4737 | 1 w | Do-41 | Herunterladen | Ear99 | 8541.10.0050 | 1 | 10 µa @ 5 V | 7,5 v | 4 Ohm | ||||||||||||||
![]() | 1N6009b | 1.8400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 Na @ 18 V. | 24 v | 62 Ohm | |||||||||||||
![]() | 1N5239BTR | 0,0200 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 3 µa @ 7 V. | 9.1 v | 10 Ohm | ||||||||||||||
![]() | MBR1560CT | 1.0000 | ![]() | 5560 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 | Schottky | To-220-3 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 60 v | 15a | 900 mv @ 15 a | 1 ma @ 60 v | -65 ° C ~ 150 ° C. | |||||||||||||
![]() | 1N5235BTR | 0,0200 | ![]() | 254 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 3 µa @ 5 V | 6,8 v | 5 Ohm | ||||||||||||||
![]() | FLZ4V3B | 0,0200 | ![]() | 48 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 470 na @ 1 v | 4.3 v | 32 Ohm | |||||||||||||
![]() | 1N6024B | - - - | ![]() | 5035 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 175 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 1 | 1,1 V @ 200 Ma | 100 na @ 76 v | 100 v | 500 Ohm | |||||||||||
![]() | BZX79C22 | 0,0200 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,5 V @ 100 mA | 50 na @ 15.4 v | 22 v | 55 Ohm | |||||||||||||
![]() | 1N6005b | 1.8400 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 Na @ 12 V. | 16 v | 36 Ohm | |||||||||||||
![]() | Fya3010dntu | 1.2300 | ![]() | 380 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | TO-3P-3, SC-65-3 | Schottky | To-3pn | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 100 v | 30a | 1,05 V @ 30 a | 1 ma @ 100 v | -65 ° C ~ 150 ° C. | |||||||||||||
![]() | BZX79C18 | 0,0500 | ![]() | 63 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,5 V @ 100 mA | 50 NA @ 12,6 V. | 18 v | 45 Ohm | |||||||||||||
![]() | 1N4728ATR | 0,0300 | ![]() | 135 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 11.053 | 100 µa @ 1 V | 3.3 v | 10 Ohm | |||||||||||||||
![]() | BZX79C5v6 | 0,0300 | ![]() | 70 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,5 V @ 100 mA | 1 µa @ 2 V. | 5.6 v | 40 Ohm | ||||||||||||||
![]() | MMBZ5239B | 0,0200 | ![]() | 379 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBZ52 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 3 µa @ 7 V. | 9.1 v | 10 Ohm | ||||||||||
![]() | 1N914_NL | 0,0200 | ![]() | 5289 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.835 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 10 mA | 4 ns | 5 µa @ 75 V | -55 ° C ~ 175 ° C. | 200 ma | 4PF @ 0V, 1MHz | |||||||||
![]() | 1n5233b.ta | 0,0200 | ![]() | 2087 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | Ear99 | 8541.10.0050 | 5.000 | 1,2 V @ 200 Ma | 5 µa @ 3,5 V | 6 v | 7 Ohm | ||||||||||||||
![]() | Bas70SL-FS | 1.0000 | ![]() | 1502 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SOD-923 | Schottky | SOD-923F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 8.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 70 V | 1 V @ 15 mA | 8 ns | 200 na @ 50 V | -55 ° C ~ 150 ° C. | 70 Ma | 3PF @ 0V, 1MHz | |||||||||
![]() | 1N6002B | 2.0000 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 NA @ 9.1 V. | 12 v | 22 Ohm | |||||||||||||
![]() | BZX85C4V3-FS | 1.0000 | ![]() | 2792 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 3 µa @ 1 V | 4.3 v | 13 Ohm | |||||||||||
![]() | Fdll914a | 0,0200 | ![]() | 6982 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | Standard | SOD-80 | Herunterladen | Ear99 | 8542.39.0001 | 3.258 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 20 mA | 4 ns | 5 µa @ 75 V | 175 ° C (max) | 200 ma | 4PF @ 0V, 1MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus