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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Diodentyp | Spannung - Peak Reverse (max) |
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![]() | MBRH24035R | 76.4925 | ![]() | 4987 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | MBRH24035 | Schottky | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 35 V | 720 MV @ 240 a | 1 ma @ 35 v | -55 ° C ~ 150 ° C. | 240a | - - - | |||||||||
![]() | MBR30020Ctr | 94.5030 | ![]() | 3056 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | MBR30020 | Schottky | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBR30020Ctrgn | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 20 v | 150a | 650 mv @ 150 a | 8 ma @ 20 v | -55 ° C ~ 150 ° C. | ||||||||
![]() | MBRTA80030R | - - - | ![]() | 4784 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 18 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 30 v | 400a | 720 MV @ 400 a | 1 ma @ 30 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRF60080R | - - - | ![]() | 4000 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 80 v | 300a | 840 mv @ 250 a | 1 ma @ 80 V | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRF12040R | - - - | ![]() | 4493 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 40 v | 60a | 700 mv @ 60 a | 1 ma @ 40 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRF200100 | - - - | ![]() | 2919 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 100 v | 60a | 840 mv @ 60 a | 1 ma @ 100 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | S400Q | 88.0320 | ![]() | 1294 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | Do-205AB, Do-9, Stud | S400 | Standard | DO-205AB (DO-9) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S400qgn | Ear99 | 8541.10.0080 | 8 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1200 V | 1,2 V @ 400 a | 10 µa @ 50 V | -60 ° C ~ 200 ° C. | 400a | - - - | ||||||||
![]() | MBRH24080R | 76.4925 | ![]() | 7139 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | MBRH24080 | Schottky | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 80 v | 840 mv @ 240 a | 1 ma @ 80 V | -55 ° C ~ 150 ° C. | 240a | - - - | |||||||||
![]() | S12BR | 4.2345 | ![]() | 2679 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | S12B | Standard, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S12BRGN | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 100 v | 1,1 V @ 12 a | 10 µa @ 50 V | -65 ° C ~ 175 ° C. | 12a | - - - | ||||||||
![]() | MBR60035Ctr | 129.3585 | ![]() | 6710 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | MBR60035 | Schottky | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBR60035Ctrgn | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 35 V | 300a | 750 MV @ 300 a | 1 ma @ 20 v | -55 ° C ~ 150 ° C. | ||||||||
![]() | MBRT30020L | - - - | ![]() | 5089 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 20 v | 150a | 580 mv @ 150 a | 3 ma @ 20 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | 1N3880 | 4.9020 | ![]() | 5171 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | 1N3880 | Standard | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 1N3880GN | Ear99 | 8541.10.0080 | 250 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 1,4 V @ 6 a | 200 ns | 15 µa @ 50 V | -65 ° C ~ 150 ° C. | 6a | - - - | |||||||
![]() | FST12080 | 70.4280 | ![]() | 5683 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | To-249ab | Schottky | To-249ab | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | FST12080GN | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 80 v | 120a (DC) | 840 mv @ 120 a | 2 ma @ 20 v | -55 ° C ~ 150 ° C. | |||||||||
![]() | FST8335SM | - - - | ![]() | 1176 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | D61-3SM | Schottky | D61-3SM | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 30 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 35 V | 80A (DC) | 650 mv @ 80 a | 1,5 mA @ 20 v | -55 ° C ~ 150 ° C. | ||||||||||
![]() | MBR40045Ctrl | - - - | ![]() | 9905 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 45 V | 200a | 600 mv @ 200 a | 5 ma @ 45 V | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRH20020R | 70.0545 | ![]() | 4250 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | MBRH20020 | Schottky, Umgekehrte Polarität | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBRH20020Rgn | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 20 v | 650 mv @ 200 a | 5 ma @ 20 v | 200a | - - - | |||||||||
![]() | Fst6310m | - - - | ![]() | 7770 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | D61-3m | Schottky | D61-3m | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 10 v | 30a | 700 mv @ 30 a | 1 ma @ 10 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | FR16DR02 | 8.5020 | ![]() | 6699 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | Standard, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | FR16DR02GN | Ear99 | 8541.10.0080 | 250 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 900 mv @ 16 a | 200 ns | 25 µa @ 100 V | -65 ° C ~ 150 ° C. | 16a | - - - | ||||||||
![]() | Murf40005r | - - - | ![]() | 6192 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Standard | To-244 | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 50 v | 200a | 1 V @ 200 a | 150 ns | 25 µa @ 50 V | -55 ° C ~ 150 ° C. | ||||||||||
![]() | UFT10020 | - - - | ![]() | 4249 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-249ab | Standard | To-249ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 50a | 1 V @ 50 a | 60 ns | 25 µA @ 200 V. | -55 ° C ~ 150 ° C. | ||||||||||
![]() | MBRTA40040L | - - - | ![]() | 4203 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 18 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 40 v | 200a | 600 mv @ 200 a | 5 ma @ 40 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRT40030L | - - - | ![]() | 8381 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 30 v | 200a | 580 mv @ 200 a | 3 ma @ 30 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | W06m | - - - | ![]() | 7468 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 125 ° C (TJ) | K. Loch | 4-Zirkular, wom | Standard | Wom | Herunterladen | 1 (unbegrenzt) | W06mgn | Ear99 | 8541.10.0080 | 1.000 | 1 V @ 1 a | 10 µa @ 600 V | 1,5 a | Einphase | 600 V | |||||||||||
![]() | KBPM204G | - - - | ![]() | 3278 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-sip, kbpm | Standard | Kbpm | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | KBPM204GGN | Ear99 | 8541.10.0080 | 1.000 | 1,1 V @ 2 a | 5 µa @ 50 V | 2 a | Einphase | 400 V | ||||||||||
![]() | 1N3893 | 5.6380 | ![]() | 7772 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | 1N3893 | Standard | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 1N3893gn | Ear99 | 8541.10.0080 | 250 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,4 V @ 12 a | 200 ns | 25 µa @ 50 V | -65 ° C ~ 150 ° C. | 12a | - - - | |||||||
![]() | FST120150 | 70.4280 | ![]() | 4347 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | To-249ab | Schottky | To-249ab | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 150 v | 60a | 880 mv @ 60 a | 1 mA @ 150 V | -55 ° C ~ 150 ° C. | ||||||||||
![]() | MURH7060 | 49.5120 | ![]() | 1252 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | Standard | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,7 V @ 70 a | 110 ns | 25 µa @ 600 V | -55 ° C ~ 150 ° C. | 70a | - - - | |||||||||
![]() | MBRF40080R | - - - | ![]() | 2563 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 80 v | 200a | 840 mv @ 200 a | 1 ma @ 80 V | -55 ° C ~ 150 ° C. | |||||||||||
![]() | MBRF20020 | - - - | ![]() | 4219 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 20 v | 100a | 700 mV @ 100 a | 1 ma @ 20 v | -55 ° C ~ 150 ° C. | |||||||||||
![]() | KBU1001 | 0,8205 | ![]() | 8284 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBU1001gn | Ear99 | 8541.10.0080 | 400 | 1,05 V @ 10 a | 10 µa @ 100 V. | 10 a | Einphase | 100 v |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus