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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Diodentyp | Spannung - Peak Reverse (max) |
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![]() | Gbj6b | 0,6645 | ![]() | 9226 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ6B | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 100 V. | 6 a | Einphase | 100 v | |||||||||
![]() | Gbj6j | 0,6645 | ![]() | 4675 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ6J | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 600 V | 6 a | Einphase | 600 V | |||||||||
![]() | GBJ30G | 1.1205 | ![]() | 5909 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj30g | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 400 V | 30 a | Einphase | 400 V | |||||||||
![]() | GBPC15010T | 1.8979 | ![]() | 8514 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC-T | GBPC15010 | Standard | GBPC-T | - - - | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 7,5 a | 5 µA @ 1000 V | 15 a | Einphase | 1 kv | |||||||||
![]() | DB155G | 0,2325 | ![]() | 6311 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-EDIP (0,321 ", 8,15 mm) | DB155 | Standard | Db | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | DB155GGN | Ear99 | 8541.10.0080 | 2.500 | 1,1 V @ 1,5 a | 5 µa @ 600 V | 1,5 a | Einphase | 600 V | ||||||||
![]() | KBP208G | 0,2280 | ![]() | 3867 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBP | KBP208 | Standard | KBP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBP208GGS | Ear99 | 8541.10.0080 | 500 | 1,1 V @ 2 a | 10 µa @ 50 V | 2 a | Einphase | 800 V | ||||||||
![]() | Gbu4b | 0,4725 | ![]() | 1430 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBU | GBU4 | Standard | GBU | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 500 | 1,1 V @ 4 a | 5 µa @ 100 V. | 4 a | Einphase | 100 v | |||||||||
FR85JR05 | 27.9100 | ![]() | 19 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AB, DO-5, Stud | Standard, Umgekehrte Polarität | Do-5 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 100 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,4 V @ 85 a | 500 ns | 25 µa @ 100 V | -40 ° C ~ 125 ° C. | 85a | - - - | |||||||||
![]() | Gbj30d | 1.1205 | ![]() | 7632 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj30d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 200 V. | 30 a | Einphase | 200 v | |||||||||
BR84 | 0,8910 | ![]() | 1683 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 125 ° C (TJ) | K. Loch | 4 Quadratmeter, BR-8 | Standard | BR-8 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | BR84GN | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 1 a | 10 µa @ 400 V | 8 a | Einphase | 400 V | ||||||||||
SD4145R | 14.3280 | ![]() | 5296 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | SD4145 | Schottky, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 250 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 45 V | 680 mv @ 30 a | 1,5 mA @ 35 V. | -55 ° C ~ 150 ° C. | 30a | - - - | |||||||||
![]() | MBR60045Ctrl | - - - | ![]() | 5064 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 45 V | 300a | 600 mv @ 300 a | 5 ma @ 45 V | -55 ° C ~ 150 ° C. | ||||||||||
![]() | GBJ35B | 1.6410 | ![]() | 1019 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ35 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ35B | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 17.5 a | 10 µa @ 100 V. | 35 a | Einphase | 100 v | |||||||||
![]() | Murf10005 | - - - | ![]() | 2925 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Standard | To-244 | - - - | 1 (unbegrenzt) | Murf10005gn | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 50 v | 50a | 1,3 V @ 50 a | 75 ns | 25 µa @ 50 V | -55 ° C ~ 150 ° C. | ||||||||
![]() | GBJ25K | 0,9795 | ![]() | 5563 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ25 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ25K | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 12.5 a | 10 µa @ 800 V | 25 a | Einphase | 800 V | |||||||||
![]() | Gbj6m | 0,6645 | ![]() | 2848 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj6m | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µA @ 1000 V | 6 a | Einphase | 1 kv | |||||||||
![]() | GBJ10J | 0,7470 | ![]() | 8686 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ10 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ10J | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 5 a | 5 µa @ 600 V | 10 a | Einphase | 600 V | |||||||||
![]() | GBJ15J | 0,7875 | ![]() | 5273 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ15 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ15J | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 7,5 a | 5 µa @ 600 V | 15 a | Einphase | 600 V | |||||||||
![]() | GBJ30K | 1.1205 | ![]() | 6434 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ30K | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 800 V | 30 a | Einphase | 800 V | |||||||||
![]() | GBJ25G | 0,9795 | ![]() | 6281 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ25 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ25G | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 12.5 a | 10 µa @ 400 V | 25 a | Einphase | 400 V | |||||||||
![]() | GBJ30J | 1.1205 | ![]() | 4294 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ30J | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 600 V | 30 a | Einphase | 600 V | |||||||||
![]() | M3P100A-80 | - - - | ![]() | 3281 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 5-SMD-Modul | Standard | 5-smd | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 24 | 1,15 V @ 100 a | 10 mA @ 800 V | 100 a | DRIPHASE | 800 V | |||||||||||
![]() | Gbj20d | 0,9120 | ![]() | 6810 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ20 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj20d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 10 a | 5 µa @ 200 V. | 20 a | Einphase | 200 v | |||||||||
![]() | KBU8K | 0,7425 | ![]() | 6174 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | KBU8 | Standard | KBU | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBU8KGN | Ear99 | 8541.10.0080 | 400 | 1 V @ 8 a | 10 µa @ 800 V | 8 a | Einphase | 800 V | ||||||||
![]() | GBPC5004W | 4.0155 | ![]() | 6179 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | GBPC5004 | Standard | Gbpc-w | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,2 V @ 25 a | 5 µa @ 400 V | 50 a | Einphase | 400 V | |||||||||
![]() | GBPC25005W | 2.5335 | ![]() | 5871 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | GBPC25005 | Standard | Gbpc-w | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | GBPC25005WGS | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 7,5 a | 5 µa @ 50 V | 25 a | Einphase | 50 v | ||||||||
![]() | Gbj6d | 0,6645 | ![]() | 1569 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj6d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 200 V. | 6 a | Einphase | 200 v | |||||||||
![]() | M3P75a-60 | - - - | ![]() | 6517 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | 5-SMD-Modul | Standard | 5-smd | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 24 | 10 µa @ 600 V | 75 a | DRIPHASE | 600 V | ||||||||||||
![]() | GBPC1508T | 2.4180 | ![]() | 8094 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | GBPC1508 | Standard | GBPC | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 7,5 a | 5 µa @ 800 V | 15 a | Einphase | 800 V | |||||||||
![]() | S150JR | 35.5695 | ![]() | 1323 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-205AA, DO-8, Stud | S150 | Standard, Umgekehrte Polarität | DO-205AA (DO-8) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S150JRgn | Ear99 | 8541.10.0080 | 10 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,2 V @ 150 a | 10 µa @ 600 V | -65 ° C ~ 200 ° C. | 150a | - - - |
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