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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | HGTP12N60A4 | 0,6700 | ![]() | 449 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Standard | 167 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | 390 V, 12a, 10ohm, 15 V. | - - - | 600 V | 54 a | 96 a | 2,7 V @ 15V, 12a | 55 µJ (EIN), 50 µJ (AUS) | 78 NC | 17ns/96ns | |||||||||||||||||||||||||||||
![]() | FDB9403 | 2.3100 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDB940 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 800 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | KSP13TF | 1.0000 | ![]() | 7331 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||||||
![]() | FDMS7680 | - - - | ![]() | 1255 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 14a (ta), 28a (TC) | 4,5 V, 10 V. | 6,9 MOHM @ 14A, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 20 V | 1850 PF @ 15 V | - - - | 2,5 W (TA), 33W (TC) | |||||||||||||||||||||||||||||
![]() | HUFA76639S3S | 0,6700 | ![]() | 9021 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 353 | N-Kanal | 100 v | 51a (TC) | 4,5 V, 10 V. | 26mohm @ 51a, 10V | 3v @ 250 ähm | 86 NC @ 10 V | ± 16 v | 2400 PF @ 25 V. | - - - | 180W (TC) | ||||||||||||||||||||||||||||
FP7G100US60 | 33,5000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Power-SPM ™ | Rohr | Veraltet | -40 ° C ~ 125 ° C (TJ) | Chassis -berg | EPM7 | 400 w | Standard | EPM7 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 5 | Halbbrücke | - - - | 600 V | 100 a | 2,8 V @ 15V, 100a | 250 µA | NEIN | 6.085 NF @ 30 V | |||||||||||||||||||||||||||||||
![]() | FQD60N03LTM | 0,6000 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 30a (TC) | 5v, 10V | 23mohm @ 30a, 10V | 3v @ 250 ähm | 46 NC @ 10 V | ± 16 v | 900 PF @ 15 V | - - - | 45W (TC) | ||||||||||||||||||||||||||
![]() | Fjy4010r | 0,0200 | ![]() | 9922 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy401 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 10 Kohms | |||||||||||||||||||||||||||||||
![]() | FQA6N90 | 1.0000 | ![]() | 2704 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | N-Kanal | 900 V | 6.4a (TC) | 10V | 1,9OHM @ 3,2a, 10 V. | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1880 PF @ 25 V. | - - - | 198W (TC) | ||||||||||||||||||||||||||||
![]() | FCD3400N80Z | - - - | ![]() | 3323 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 800 V | 2a (TC) | 10V | 3,4ohm @ 1a, 10V | 4,5 V @ 200 ähm | 9.6 NC @ 10 V. | ± 20 V | 400 PF @ 100 V | - - - | 32W (TC) | ||||||||||||||||||||||||||||||
![]() | FDB5690 | 1.6000 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 32a (TC) | 6 V, 10V | 27mohm @ 16a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1120 PF @ 25 V. | - - - | 58W (TC) | ||||||||||||||||||||||||||||
![]() | TN4033a | 0,0900 | ![]() | 99 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | TN4033 | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.000 | 80 v | 1 a | 50na (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 100 @ 100 Ma, 5V | - - - | |||||||||||||||||||||||||||||
![]() | TIP42 | - - - | ![]() | 6188 | 0.00000000 | Fairchild Semiconductor | TIP42 | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 40 v | 6 a | 700 ähm | PNP | 1,5 V @ 600 Ma, 6a | 30 @ 300 mA, 4V | 3MHz | ||||||||||||||||||||||||||||||
![]() | FDU3580 | 0,8000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 80 v | 7.7a (ta) | 6 V, 10V | 29mohm @ 7.7a, 10V | 4v @ 250 ähm | 79 NC @ 10 V | ± 20 V | 1760 PF @ 40 V | - - - | 3,8 W (TA), 42W (TC) | ||||||||||||||||||||||||||||
![]() | HUF75333P3_NS2552 | 0,6400 | ![]() | 8745 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 324 | N-Kanal | 55 v | 66a (TC) | 10V | 16mohm @ 66a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||
![]() | FGH40T65SH | - - - | ![]() | 7262 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | ||||||||||||||||||||||||||||||||||||||||||
![]() | FJX4009RTF | 0,0500 | ![]() | 44 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX400 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 4.7 Kohms | |||||||||||||||||||||||||||||||
![]() | 2N4124 | 0,0200 | ![]() | 7613 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | 2156-2N4124-FS | Ear99 | 8541.21.0075 | 5.000 | 25 v | 200 ma | 50na (ICBO) | Npn | 300mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 300 MHz | |||||||||||||||||||||||||||||||
![]() | RFD14N05SM9A | 1.0000 | ![]() | 1816 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||||||||||
![]() | KSH2955TF | 0,1900 | ![]() | 83 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | D-Pak | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-KSH2955TF-600039 | 1 | 60 v | 10 a | 50 µA | PNP | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||||||||||
![]() | Fjv3102rmtf | 0,0300 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV310 | 200 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 10 Kohms | 10 Kohms | ||||||||||||||||||||||||||||
![]() | Fdn363n | 0,1700 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | Supersot ™ -3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 100 v | 1a (TC) | 6 V, 10V | 240MOHM @ 1a, 10V | 4v @ 250 ähm | 5.2 NC @ 10 V | ± 20 V | 200 PF @ 25 V. | - - - | 500 MW (TC) | ||||||||||||||||||||||||||
![]() | FDMS7676 | 1.0000 | ![]() | 4952 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 16a (ta), 28a (TC) | 4,5 V, 10 V. | 5,5 MOHM @ 19A, 10V | 3v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2960 PF @ 15 V | - - - | 2,5 W (TA), 48W (TC) | |||||||||||||||||||||||||||||
![]() | FDMS5360L-F085 | - - - | ![]() | 3508 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | Power56 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDMS5360L-F085-600039 | 1 | N-Kanal | 60 v | 60a (TC) | 4,5 V, 10 V. | 8.5MOHM @ 60A, 10V | 3v @ 250 ähm | 72 NC @ 10 V | ± 20 V | 3695 PF @ 30 V | - - - | 150W (TC) | ||||||||||||||||||||||||||||
![]() | FQT4N20TF | 0,3200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 200 v | 850 Ma (TC) | 10V | 1,4OHM @ 425 mA, 10V | 5 V @ 250 ähm | 6,5 NC @ 10 V. | ± 30 v | 220 PF @ 25 V. | - - - | 2,2 W (TC) | ||||||||||||||||||||||||||||
![]() | Si4425dy | - - - | ![]() | 9161 | 0.00000000 | Fairchild Semiconductor | Powertrench ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 14mohm @ 11a, 10V | 3v @ 250 ähm | 42 NC @ 5 V | ± 20 V | 3000 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||||
![]() | Fdz209n | 0,8700 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-WFBGA | MOSFET (Metalloxid) | 12-bga (2x2,5) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 4a (ta) | 5v | 80Mohm @ 4a, 5V | 3v @ 250 ähm | 9 NC @ 5 V | ± 20 V | 657 PF @ 30 V | - - - | 2W (TA) | ||||||||||||||||||||||||||||
![]() | KSC2785YTA | 0,0200 | ![]() | 338 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Kurzkörper | 250 MW | To-92s | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 150 Ma | 100NA (ICBO) | Npn | 300mv @ 10 mA, 100 mA | 120 @ 1ma, 6v | 300 MHz | ||||||||||||||||||||||||||||||||
![]() | 2SA608NG-NPA-AT | 0,0500 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 500 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.500 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 280 @ 1ma, 6v | 200 MHz | ||||||||||||||||||||||||||||||||
![]() | SGH20N120RUFDtu | - - - | ![]() | 4216 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | SGH20N | Standard | 230 w | To-3p | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 9 | 600 V, 20a, 15ohm, 15 V. | 80 ns | - - - | 1200 V | 32 a | 60 a | 3v @ 15V, 20a | 1,3mj (Ein), 1,3mj (AUS) | 140 nc | 30ns/70ns |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus