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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | MJD45H11TM | - - - | ![]() | 3505 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MJD45 | 1,75 w | To-252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1,158 | 80 v | 8 a | 10 µA | PNP | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 40 MHz | |||||||||||||||||||||||||||
![]() | FDPF3860T | 1.0000 | ![]() | 9802 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 20A (TC) | 10V | 38.2mohm @ 5.9a, 10V | 4,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1800 PF @ 25 V. | - - - | 33.8W (TC) | |||||||||||||||||||||||||||
![]() | TN6726a | 0,1000 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.000 | 30 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 60 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||
![]() | FQAF16N25 | 0,9200 | ![]() | 682 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 250 V | 12,4a (TC) | 10V | 230mohm @ 6.2a, 10 V. | 5 V @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1200 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||||||
![]() | HUFA76645S3S | 1.2100 | ![]() | 3305 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 176 | N-Kanal | 100 v | 75a (TC) | 4,5 V, 10 V. | 14mohm @ 75a, 10V | 3v @ 250 ähm | 153 NC @ 10 V | ± 16 v | 4400 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||||
![]() | TIP29A | - - - | ![]() | 7289 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 889 | 60 v | 1 a | 300 µA | Npn | 700 MV @ 125 Ma, 1a | 40 @ 200 Ma, 4V | 3MHz | ||||||||||||||||||||||||||||
![]() | TN3019A | 0,1500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.500 | 80 v | 1 a | 10NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 100 MHz | ||||||||||||||||||||||||||||||
![]() | FJN4303RTA | 0,0200 | ![]() | 101 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | FJN430 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 200 MHz | 22 Kohms | 22 Kohms | ||||||||||||||||||||||||||
![]() | RFD14N05SM9A | 1.0000 | ![]() | 1816 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||||||||
![]() | BD13610stu | 0,3200 | ![]() | 37 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,25 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 933 | 45 V | 1,5 a | 100NA (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 63 @ 150 mA, 2V | - - - | |||||||||||||||||||||||||||||||
![]() | PN200 | 0,0500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 6,217 | 45 V | 500 mA | 50na | PNP | 400mv @ 20 mA, 200 mA | 100 @ 150 mA, 1V | 250 MHz | ||||||||||||||||||||||||||||||
![]() | Fqpf18n20v2ydtu | 1.0800 | ![]() | 101 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 18a (TC) | 10V | 140MOHM @ 9A, 10V | 5 V @ 250 ähm | 26 NC @ 10 V | ± 30 v | 1080 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||||||||||
![]() | IRFS540A | 0,6600 | ![]() | 92 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 17a (TC) | 10V | 52mohm @ 8.5a, 10V | 4v @ 250 ähm | 78 NC @ 10 V | - - - | 1710 PF @ 25 V | - - - | 39W (TC) | ||||||||||||||||||||||||||
![]() | MMBTA42-FS | - - - | ![]() | 9829 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 240 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1.000 | 300 V | 500 mA | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 40 @ 30 ma, 10V | 50 MHz | ||||||||||||||||||||||||||||
![]() | BC308 | - - - | ![]() | 4627 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.036 | 25 v | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 120 @ 2MA, 5V | 130 MHz | ||||||||||||||||||||||||||||||
![]() | SS9012HBU | 0,0300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | SS9012 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 20 v | 500 mA | 100NA (ICBO) | PNP | 600mv @ 50 mA, 500 mA | 144 @ 50 Ma, 1V | - - - | |||||||||||||||||||||||||||
![]() | FDMD8260L | 1.6600 | ![]() | 122 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-Powerwdfn | FDMD8260 | MOSFET (Metalloxid) | 1W | 12-Power3.3x5 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 60 v | 15a | 5.8mohm @ 15a, 10V | 3v @ 250 ähm | 68nc @ 10v | 5245PF @ 30V | - - - | ||||||||||||||||||||||||||||
![]() | FPNH10 | - - - | ![]() | 5662 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,315 | - - - | 25 v | 50 ma | Npn | 60 @ 4ma, 10V | 650 MHz | - - - | ||||||||||||||||||||||||||||||
![]() | FDPF17N60NT | - - - | ![]() | 4382 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 17a (TC) | 10V | 340MOHM @ 8.5a, 10V | 5 V @ 250 ähm | 65 NC @ 10 V | ± 30 v | 3040 PF @ 25 V. | - - - | 62,5W (TC) | |||||||||||||||||||||||||||
![]() | FGA4060ADF | 2.2300 | ![]() | 275 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 238 w | To-3pn | Herunterladen | Ear99 | 8541.29.0095 | 1 | 400 V, 40a, 6OHM, 15 V. | 26 ns | TRABENFELD STOPP | 600 V | 80 a | 120 a | 2,3 V @ 15V, 40a | 1,37MJ (EIN), 250 µJ (AUS) | 55,5 NC | 16,8ns/54,4ns | |||||||||||||||||||||||||||
![]() | KSC2334Y | 0,7000 | ![]() | 600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | Herunterladen | 0000.00.0000 | 429 | 100 v | 7 a | 10 µA (ICBO) | Npn | 600mv @ 500 mA, 5a | 120 @ 3a, 5V | - - - | ||||||||||||||||||||||||||||||||
![]() | D44C8 | 1.0000 | ![]() | 8509 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | D44C | 60 w | To-220-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 4 a | 10 µA | Npn | 500mv @ 50 Ma, 1a | 20 @ 2a, 1V | 40 MHz | |||||||||||||||||||||||||||
![]() | IRFS614B | 0,1800 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.664 | N-Kanal | 250 V | 2.8a (TJ) | 10V | 2OHM @ 1,4a, 10V | 4v @ 250 ähm | 10.5 NC @ 10 V | ± 30 v | 275 PF @ 25 V. | - - - | 22W (TC) | ||||||||||||||||||||||||
![]() | HUFA76437S3ST | 1.2100 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 71a (TC) | 4,5 V, 10 V. | 14mohm @ 71a, 10V | 3v @ 250 ähm | 71 NC @ 10 V | ± 16 v | 2230 PF @ 25 V. | - - - | 155W (TC) | ||||||||||||||||||||||||||
![]() | BD240A | 0,2300 | ![]() | 8277 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.022 | 60 v | 2 a | 300 µA | PNP | 700mv @ 200 Ma, 1a | 15 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||
![]() | Fdz7064n | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 30-WFBGA | MOSFET (Metalloxid) | 30-bga (4x3,5) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 13,5a (TA) | 4,5 V, 10 V. | 7mohm @ 14.5a, 10V | 2v @ 250 ähm | 43 NC @ 4,5 V. | ± 12 V | 3843 PF @ 15 V | - - - | 2.2W (TA) | ||||||||||||||||||||||||||
![]() | FDS6690S | 0,9600 | ![]() | 427 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 16mohm @ 10a, 10V | 3V @ 1ma | 16 NC @ 5 V | ± 20 V | 1233 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||
![]() | FJX4013RTF | 0,0500 | ![]() | 3520 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX401 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4,812 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 2.2 Kohms | 47 Kohms | ||||||||||||||||||||||||||||
![]() | FGPF70N30TRDTU | 1.1600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | FJC1308ptf | 0,0900 | ![]() | 5622 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 148 | 30 v | 3 a | 500NA | PNP | 450 MV @ 150 Ma, 1,5a | 80 @ 500 mA, 2V | - - - |
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